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2N7002E-T1-GE3
Product Overview
Category
The 2N7002E-T1-GE3 belongs to the category of small-signal field-effect transistors (FETs).
Use
It is commonly used for switching and amplification in various electronic circuits.
Characteristics
- Low threshold voltage
- Low input capacitance
- Fast switching speed
- Small package size
Package
The 2N7002E-T1-GE3 is typically available in a SOT-23 package.
Essence
This FET is essential for controlling the flow of current in electronic devices and circuits.
Packaging/Quantity
It is usually supplied in reels with varying quantities, depending on the manufacturer's specifications.
Specifications
- Drain-Source Voltage (VDS): 60V
- Continuous Drain Current (ID): 115mA
- Power Dissipation (PD): 200mW
- Threshold Voltage (VGSth): 0.8V - 3V
- Input Capacitance (Ciss): 45pF
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The 2N7002E-T1-GE3 has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- Low on-resistance
- High-speed switching
- Compatibility with low-voltage control signals
Advantages
- Small form factor
- Low power consumption
- Suitable for low-voltage applications
Disadvantages
- Limited maximum voltage and current ratings
- Sensitivity to static electricity
Working Principles
The 2N7002E-T1-GE3 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The 2N7002E-T1-GE3 is widely used in: - Switching circuits - Amplifier circuits - Low-voltage applications - Battery-powered devices
Detailed and Complete Alternative Models
Some alternative models to the 2N7002E-T1-GE3 include: - BS170 - IRF530 - BSS138 - DMG2305UX
In conclusion, the 2N7002E-T1-GE3 is a versatile small-signal FET with characteristics suitable for various electronic applications, especially those requiring low-voltage operation and compact design.
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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan 2N7002E-T1-GE3 dalam solusi teknis
Sure, here are 10 common questions and answers related to the application of 2N7002E-T1-GE3 in technical solutions:
What is the maximum drain-source voltage (Vds) of 2N7002E-T1-GE3?
- The maximum drain-source voltage (Vds) of 2N7002E-T1-GE3 is 60V.
What is the continuous drain current (Id) rating of 2N7002E-T1-GE3?
- The continuous drain current (Id) rating of 2N7002E-T1-GE3 is 310mA.
Can 2N7002E-T1-GE3 be used for low-power switching applications?
- Yes, 2N7002E-T1-GE3 is suitable for low-power switching applications due to its low threshold voltage and low on-resistance.
What is the typical threshold voltage (Vgs(th)) of 2N7002E-T1-GE3?
- The typical threshold voltage (Vgs(th)) of 2N7002E-T1-GE3 is 1.3V.
Is 2N7002E-T1-GE3 suitable for level shifting applications?
- Yes, 2N7002E-T1-GE3 can be used for level shifting applications due to its low threshold voltage and compatibility with different logic levels.
What is the maximum junction temperature (Tj) of 2N7002E-T1-GE3?
- The maximum junction temperature (Tj) of 2N7002E-T1-GE3 is 150°C.
Can 2N7002E-T1-GE3 be used in battery management systems?
- Yes, 2N7002E-T1-GE3 can be utilized in battery management systems for low-power control and switching functions.
Does 2N7002E-T1-GE3 have ESD protection?
- Yes, 2N7002E-T1-GE3 is designed with ESD protection, making it suitable for applications where electrostatic discharge may be a concern.
What are the typical input and output capacitances of 2N7002E-T1-GE3?
- The typical input capacitance (Ciss) of 2N7002E-T1-GE3 is 45pF, and the typical output capacitance (Coss) is 30pF.
Is 2N7002E-T1-GE3 RoHS compliant?
- Yes, 2N7002E-T1-GE3 is RoHS compliant, meeting environmental standards for lead-free and hazardous substance-free manufacturing.
These questions and answers cover various aspects of the application of 2N7002E-T1-GE3 in technical solutions, providing essential information for engineers and designers.