2SA1930, LBS2DIAQ(J)
Product Category: Transistors
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching of electronic signals - Characteristics: High current gain, low noise, and high frequency capability - Package: TO-220AB package - Essence: NPN silicon epitaxial planar transistor - Packaging/Quantity: Typically available in reels or tubes with varying quantities
Specifications: - Collector-Base Voltage (VCBO): 230V - Collector-Emitter Voltage (VCEO): 230V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 1.5A - Power Dissipation (PD): 20W - Transition Frequency (fT): 30MHz - Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration: - Pin 1 (E): Emitter - Pin 2 (B): Base - Pin 3 (C): Collector
Functional Features: - High current gain for amplification applications - Low noise characteristics suitable for signal processing - High frequency capability for RF applications
Advantages: - Reliable performance in amplification and switching circuits - Versatile application in audio amplifiers, power supplies, and RF circuits - Suitable for low-power and medium-power applications
Disadvantages: - Limited power dissipation compared to higher-rated transistors - Sensitive to overvoltage conditions due to lower breakdown voltage
Working Principles: The 2SA1930, LBS2DIAQ(J) operates based on the principles of bipolar junction transistors, utilizing the interaction between minority and majority charge carriers to control the flow of current through the device.
Detailed Application Field Plans: - Audio Amplifiers: Utilized as a key component in audio amplification circuits due to its high current gain and low noise characteristics. - Power Supplies: Integrated into linear and switching power supply designs for voltage regulation and current control. - RF Circuits: Employed in radio frequency applications such as oscillators and amplifiers due to its high frequency capability.
Detailed and Complete Alternative Models: - 2SC5200: Complementary NPN transistor with higher power dissipation capability - BC547: General-purpose NPN transistor suitable for low-power applications - MJE3055: NPN power transistor with higher current and power handling capacity
This comprehensive overview provides insight into the 2SA1930, LBS2DIAQ(J) transistor, covering its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.
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What is the application of 2SA1930 and LBS2DIAQ(J)?
How do I use 2SA1930 and LBS2DIAQ(J) in an audio amplifier circuit?
Can 2SA1930 and LBS2DIAQ(J) be used in voltage regulator circuits?
Are there any specific considerations when using 2SA1930 and LBS2DIAQ(J) in power supply circuits?
What are the typical operating conditions for 2SA1930 and LBS2DIAQ(J)?
Can 2SA1930 and LBS2DIAQ(J) be used in high-frequency applications?
What are the key differences between 2SA1930 and LBS2DIAQ(J) compared to other similar components?
How can I ensure proper thermal management when using 2SA1930 in a technical solution?
Are there any common failure modes associated with 2SA1930 and LBS2DIAQ(J)?
Can 2SA1930 and LBS2DIAQ(J) be used in automotive applications?