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SN74CB3T16212DGVR

SN74CB3T16212DGVR

Product Overview

Category

SN74CB3T16212DGVR belongs to the category of digital logic integrated circuits.

Use

This product is commonly used for signal switching and level shifting applications in various electronic devices.

Characteristics

  • Low power consumption
  • High-speed operation
  • Wide operating voltage range
  • Bidirectional signal transmission capability
  • ESD protection
  • RoHS compliant

Package

SN74CB3T16212DGVR is available in a small form factor package, such as VSSOP or TSSOP.

Essence

The essence of SN74CB3T16212DGVR lies in its ability to efficiently switch and shift signals between different voltage levels, ensuring reliable data transmission within electronic systems.

Packaging/Quantity

SN74CB3T16212DGVR is typically packaged in reels or tubes, with a quantity of several hundred units per package.

Specifications

  • Supply Voltage: 1.65V to 5.5V
  • Operating Temperature Range: -40°C to +85°C
  • Number of Channels: 16
  • On-State Resistance: <10Ω
  • Maximum Data Rate: 400Mbps
  • Input/Output Capacitance: <5pF
  • Propagation Delay: <2ns

Detailed Pin Configuration

The pin configuration of SN74CB3T16212DGVR is as follows:

Pin 1: Channel 1 Input/Output Pin 2: Channel 2 Input/Output ... Pin 31: Channel 15 Input/Output Pin 32: Channel 16 Input/Output Pin 33: GND Pin 34: VCC

Functional Features

  • Bidirectional signal transmission: Allows data to be transmitted in both directions.
  • Level shifting capability: Enables interfacing between devices operating at different voltage levels.
  • Low on-state resistance: Minimizes signal attenuation and distortion.
  • High-speed operation: Facilitates fast data transfer rates.
  • ESD protection: Guards against electrostatic discharge, enhancing device reliability.

Advantages and Disadvantages

Advantages

  • Versatile application range
  • Efficient signal switching and level shifting
  • Low power consumption
  • Compact package size
  • RoHS compliant

Disadvantages

  • Limited number of channels (16)
  • Relatively high propagation delay compared to some alternatives

Working Principles

SN74CB3T16212DGVR utilizes CMOS technology to achieve bidirectional signal transmission and level shifting. It employs a combination of transistors and logic gates to control the flow of signals between input and output channels.

Detailed Application Field Plans

SN74CB3T16212DGVR finds applications in various electronic systems, including but not limited to: - Data communication equipment - Mobile devices - Industrial automation - Automotive electronics - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to SN74CB3T16212DGVR are: - SN74CB3T3257DCTR - SN74CBTLV3125PW - SN74LVC1G3157DBVR - SN74LVC2T45DCUR - SN74LVC8T245PWR

These alternatives offer similar functionality and characteristics, providing flexibility in choosing the most suitable solution for specific applications.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan SN74CB3T16212DGVR dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of SN74CB3T16212DGVR in technical solutions:

  1. Q: What is SN74CB3T16212DGVR? A: SN74CB3T16212DGVR is a high-performance, low-power, 24-bit FET bus switch with configurable voltage translation and integrated pull-up resistors.

  2. Q: What are the key features of SN74CB3T16212DGVR? A: Some key features include wide voltage range support, low on-state resistance, low power consumption, and integrated pull-up resistors.

  3. Q: How can SN74CB3T16212DGVR be used in technical solutions? A: It can be used for level shifting, voltage translation, bus switching, and multiplexing applications in various electronic systems.

  4. Q: What is the voltage range supported by SN74CB3T16212DGVR? A: SN74CB3T16212DGVR supports a voltage range from 1.2V to 3.6V, making it compatible with a wide range of devices.

  5. Q: Can SN74CB3T16212DGVR handle bidirectional communication? A: Yes, SN74CB3T16212DGVR supports bidirectional data flow, allowing it to be used in both input and output scenarios.

  6. Q: Does SN74CB3T16212DGVR have built-in ESD protection? A: Yes, SN74CB3T16212DGVR has built-in ESD protection, ensuring robustness against electrostatic discharge events.

  7. Q: What is the maximum data rate supported by SN74CB3T16212DGVR? A: SN74CB3T16212DGVR can support data rates up to 100 MHz, making it suitable for high-speed applications.

  8. Q: Can SN74CB3T16212DGVR be used in battery-powered devices? A: Yes, SN74CB3T16212DGVR has low power consumption and can be used in battery-powered devices to conserve energy.

  9. Q: Are there any recommended layout guidelines for using SN74CB3T16212DGVR? A: Yes, the datasheet provides layout recommendations to minimize noise, optimize signal integrity, and ensure proper operation.

  10. Q: Where can I find more information about SN74CB3T16212DGVR? A: You can refer to the datasheet provided by the manufacturer or visit their official website for detailed information on the device's specifications and application notes.

Please note that these answers are general and may vary depending on specific use cases and requirements. It is always recommended to consult the datasheet and relevant technical documentation for accurate information.