Taiwan Semiconductor Corporation
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BZD27C51P R3G
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BZD27C51P R3G

Introduction

The BZD27C51P R3G is a specialized component belonging to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.

Basic Information Overview

  • Category: Semiconductor Devices
  • Use: Voltage Regulator
  • Characteristics: High precision, low power consumption
  • Package: SOD-123
  • Essence: Zener Diode
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Voltage: 51V
  • Power Dissipation: 1.25W
  • Operating Temperature: -65°C to +150°C
  • Tolerance: ±5%
  • Forward Voltage: 1.2V
  • Reverse Leakage Current: 5μA

Detailed Pin Configuration

The BZD27C51P R3G has a standard SOD-123 package with three pins: Anode, Cathode, and No Connection (NC).

Functional Features

  • Voltage Regulation: Provides stable 51V output under varying load conditions.
  • Zener Action: Exhibits sharp breakdown voltage characteristics for precise regulation.
  • Low Power Consumption: Ensures minimal power loss during operation.

Advantages and Disadvantages

  • Advantages:
    • High precision voltage regulation
    • Low power consumption
    • Compact SOD-123 package
  • Disadvantages:
    • Limited current handling capacity
    • Sensitivity to temperature variations

Working Principles

The BZD27C51P R3G operates based on the Zener effect, where it maintains a constant voltage across its terminals by allowing current to flow in reverse bias when the applied voltage reaches its breakdown voltage.

Detailed Application Field Plans

The BZD27C51P R3G finds extensive use in various applications, including: - Voltage regulation in power supplies - Overvoltage protection in electronic circuits - Signal clamping and limiting in communication systems

Detailed and Complete Alternative Models

  • BZX84C51: Similar 51V Zener diode in SOT-23 package
  • BZT52C51: 51V Zener diode with higher power dissipation in SOD-123FL package
  • BZX55C51: Axial lead 51V Zener diode with rugged construction

In conclusion, the BZD27C51P R3G is a crucial component in voltage regulation applications, offering high precision and low power consumption. Its compact package and functional features make it suitable for diverse electronic designs.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan BZD27C51P R3G dalam solusi teknis

  1. What is BZD27C51P R3G?

    • BZD27C51P R3G is a high-performance, low-capacitance, transient voltage suppressor diode designed to protect sensitive electronics from voltage transients induced by lightning, inductive load switching, and electrostatic discharge.

  2. What are the key features of BZD27C51P R3G?

    • The key features include a low clamping voltage, fast response time, low leakage current, and a compact SOD-123FL package.

  3. How does BZD27C51P R3G protect electronic circuits?

    • BZD27C51P R3G provides a low-impedance path for transient currents to flow to ground, diverting potentially damaging voltage spikes away from sensitive components.

  4. In what applications can BZD27C51P R3G be used?

    • BZD27C51P R3G is commonly used in applications such as power supplies, communication equipment, industrial control systems, and automotive electronics.

  5. What is the maximum clamping voltage of BZD27C51P R3G?

    • The maximum clamping voltage is typically around 85V at a peak pulse current of 10A.

  6. What is the operating temperature range of BZD27C51P R3G?

    • The operating temperature range is usually between -55°C to +150°C, making it suitable for a wide range of environments.

  7. Does BZD27C51P R3G comply with any industry standards?

    • Yes, BZD27C51P R3G is often compliant with industry standards such as IEC 61000-4-2 (ESD) and IEC 61000-4-5 (surge).

  8. Can BZD27C51P R3G be used in high-frequency applications?

    • Yes, BZD27C51P R3G's low capacitance makes it suitable for high-frequency applications without introducing significant signal distortion.

  9. What are the recommended layout considerations for using BZD27C51P R3G?

    • It is recommended to minimize the length and impedance of the traces connecting the diode to the protected circuit and to ensure a low-inductance path to ground.

  10. Where can I find detailed specifications and application notes for BZD27C51P R3G?

    • Detailed specifications and application notes for BZD27C51P R3G can typically be found in the product datasheet provided by the manufacturer or distributor.