BR25L080F-WE2

Product Overview

Category: Integrated Circuit (IC)

Use: Non-volatile memory storage

Characteristics: - Low power consumption - High reliability - Wide operating voltage range - Small package size - Easy to integrate into various electronic devices

Package: SOP-8 (Small Outline Package)

Essence: The BR25L080F-WE2 is a non-volatile memory IC that provides reliable and low-power data storage for electronic devices.

Packaging/Quantity: The BR25L080F-WE2 is typically sold in reels, with 2500 units per reel.

Specifications

• Memory Capacity: 8 kilobits (1 kilobyte)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage Range: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The BR25L080F-WE2 has a total of 8 pins arranged as follows:

1. Chip Select (/CS) - Input pin used to enable or disable the device.
2. Serial Clock (SCK) - Input pin for synchronizing data transfer.
3. Serial Data Input (SI) - Input pin for receiving data from the microcontroller.
4. Serial Data Output (SO) - Output pin for transmitting data to the microcontroller.
5. Write Protect (/WP) - Input pin used to protect the memory from accidental writes.
6. Ground (GND) - Reference ground for the IC.
7. Power Supply (VCC) - Positive power supply pin.
8. Hold (HOLD) - Input pin used to pause serial communication temporarily.

Functional Features

• Byte-wise random access to memory
• Page write mode for faster data storage
• Software and hardware write protection options
• Sequential read mode for efficient data retrieval
• Low power consumption in standby mode
• Automatic page write timing generation

Advantages and Disadvantages

Advantages: - High reliability due to non-volatile memory technology - Wide operating voltage range allows compatibility with various systems - Small package size enables integration into space-constrained devices - Low power consumption prolongs battery life in portable applications

Disadvantages: - Limited memory capacity compared to other storage solutions - Slower write speed compared to some alternative models - Lack of built-in security features for data protection

Working Principles

The BR25L080F-WE2 utilizes a floating gate transistor structure to store data. When writing data, an electric charge is applied to the floating gate, altering its electrical characteristics. This change is detected during read operations, allowing the stored data to be retrieved.

Detailed Application Field Plans

The BR25L080F-WE2 is commonly used in various electronic devices that require non-volatile memory storage, such as: - Consumer electronics (e.g., TVs, set-top boxes) - Automotive systems (e.g., infotainment, instrument clusters) - Industrial equipment (e.g., control systems, sensors) - Medical devices (e.g., patient monitors, diagnostic equipment)

Detailed and Complete Alternative Models

1. AT25SF081 - Manufactured by Adesto Technologies
2. M95080-WMN6TP - Manufactured by STMicroelectronics
3. CAT25C08 - Manufactured by ON Semiconductor
4. FM25V05-G - Manufactured by Cypress Semiconductor
5. W25X10CLSNIG - Manufactured by Winbond Electronics

These alternative models offer similar functionality and can be considered as replacements for the BR25L080F-WE2 in various applications.

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