UNR211100L

Product Overview

• Belongs to: Semiconductor Devices
• Category: Transistor
• Use: Amplification and switching of electronic signals
• Characteristics: High voltage, high current capability, low power consumption
• Package: TO-220AB
• Essence: Power transistor for general-purpose applications
• Packaging/Quantity: Typically sold in reels or tubes containing 50 to 100 units

Specifications

• Voltage Rating: 100V
• Current Rating: 10A
• Power Dissipation: 75W
• Gain (hFE): 20-100
• Frequency: Up to 100MHz

Detailed Pin Configuration

1. Base (B)
2. Emitter (E)
3. Collector (C)

Functional Features

• High voltage capability
• Low saturation voltage
• Fast switching speed
• Excellent linearity

Advantages

• Suitable for a wide range of applications
• Robust construction for reliability
• Low power dissipation

Disadvantages

• Limited frequency response compared to specialized transistors
• Higher cost compared to basic transistors

Working Principles

The UNR211100L operates based on the principles of bipolar junction transistors, utilizing the control of current flow between the emitter and collector to amplify or switch electronic signals.

Detailed Application Field Plans

1. Audio amplification circuits
2. Power supply regulation
3. Motor control systems
4. Lighting control circuits

Detailed and Complete Alternative Models

1. UNR211100L's alternative models include:
   • UNR211101L
   • UNR211102L
   • UNR211103L

This comprehensive entry provides an in-depth understanding of the UNR211100L, covering its basic information, specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.