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STD5407NNT4G
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STD5407NNT4G

Product Overview

  • Category: Semiconductor
  • Use: Power MOSFET
  • Characteristics: High voltage, high current capability
  • Package: TO-252-3 (DPAK)
  • Essence: N-channel enhancement mode power field-effect transistor
  • Packaging/Quantity: Tape and reel, 2500 units per reel

Specifications

  • Voltage Rating: 60V
  • Current Rating: 15A
  • RDS(ON): 0.022 ohm
  • Gate Threshold Voltage: 2.5V
  • Power Dissipation: 2.5W

Detailed Pin Configuration

  1. Source
  2. Gate
  3. Drain

Functional Features

  • Low on-resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified

Advantages and Disadvantages

Advantages

  • High voltage capability
  • Low on-resistance
  • Fast switching speed

Disadvantages

  • Sensitivity to static electricity
  • Limited maximum operating temperature

Working Principles

The STD5407NNT4G operates based on the principle of controlling the flow of current between the source and drain terminals using the gate voltage.

Detailed Application Field Plans

The STD5407NNT4G is suitable for various applications including: - Switching power supplies - Motor control - Load switching - DC-DC converters

Detailed and Complete Alternative Models

  • STP16NF06L
  • IRF540N
  • FQP30N06L

This completes the English editing encyclopedia entry structure for STD5407NNT4G.

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan STD5407NNT4G dalam solusi teknis

  1. What is STD5407NNT4G?

    • STD5407NNT4G is a high-performance, low-resistance N-channel MOSFET designed for a wide range of technical solutions.

  2. What are the key features of STD5407NNT4G?

    • The key features include low on-state resistance, high current capability, fast switching speed, and a rugged design for reliable performance.

  3. What are the typical applications of STD5407NNT4G?

    • Typical applications include power management in automotive systems, industrial automation, motor control, and various other technical solutions requiring efficient power handling.

  4. What is the maximum voltage and current rating for STD5407NNT4G?

    • The maximum voltage rating is typically around 60V, and the current rating can be up to several tens of amperes, depending on the specific application and configuration.

  5. How does STD5407NNT4G compare to similar MOSFETs in the market?

    • STD5407NNT4G offers a competitive combination of low on-state resistance, high current capability, and robustness, making it suitable for demanding technical solutions.

  6. Are there any specific thermal considerations when using STD5407NNT4G?

    • Proper thermal management is important to ensure optimal performance, especially in high-power applications. Adequate heat sinking and temperature monitoring are recommended.

  7. Can STD5407NNT4G be used in both low-side and high-side configurations?

    • Yes, STD5407NNT4G can be utilized in both low-side and high-side configurations, offering flexibility in various technical solutions.

  8. What are the recommended driving and protection circuitry for STD5407NNT4G?

    • Proper gate driving techniques, including gate voltage levels and drive currents, should be followed. Additionally, overcurrent and overvoltage protection circuits are advisable for safeguarding the MOSFET and the overall system.

  9. Does STD5407NNT4G require any special ESD precautions during handling and assembly?

    • Yes, standard ESD precautions should be observed to prevent damage to the MOSFET during handling, assembly, and integration into technical solutions.

  10. Where can I find detailed technical specifications and application notes for STD5407NNT4G?

    • Detailed technical specifications, application notes, and reference designs can be found in the product datasheet and application guides provided by the manufacturer.