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NTD5807NT4G
Product Overview
- Category: Power MOSFET
- Use: Switching applications in power supplies, motor control, and other high current applications
- Characteristics: High voltage capability, low gate charge, rugged design
- Package: D2PAK-3
- Essence: High-performance power MOSFET for efficient power management
- Packaging/Quantity: Tape & Reel, 800 units per reel
Specifications
- Voltage Rating: 75V
- Current Rating: 80A
- RDS(ON): 5.8mΩ
- Gate Charge (Qg): 35nC
- Operating Temperature Range: -55°C to 175°C
Detailed Pin Configuration
- Pin 1: Source
- Pin 2: Gate
- Pin 3: Drain
Functional Features
- Low on-resistance
- Fast switching speed
- Enhanced ruggedness and reliability
- Avalanche energy specified
- Low gate charge
Advantages
- High efficiency in power management
- Suitable for high current applications
- Rugged design for reliable performance
Disadvantages
- Higher cost compared to standard MOSFETs
- Sensitive to static electricity
Working Principles
The NTD5807NT4G operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals.
Detailed Application Field Plans
- Power Supplies: Used in high-efficiency switch-mode power supplies for various electronic devices.
- Motor Control: Employed in motor drive circuits for controlling the speed and direction of motors.
- High Current Applications: Utilized in applications requiring high current handling such as automotive systems and industrial equipment.
Detailed and Complete Alternative Models
- IRF3205
- FDP8870
- IPP60R190E6
This comprehensive entry provides a detailed overview of the NTD5807NT4G, covering its specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan NTD5807NT4G dalam solusi teknis
What is NTD5807NT4G?
- NTD5807NT4G is a high-voltage, high-current N-channel Power MOSFET designed for various technical solutions requiring efficient power management.
What are the key specifications of NTD5807NT4G?
- The key specifications include a maximum drain-source voltage of 75V, continuous drain current of 80A, and low on-resistance for improved efficiency.
In what applications can NTD5807NT4G be used?
- NTD5807NT4G is commonly used in applications such as motor control, power supplies, DC-DC converters, and automotive systems.
What are the thermal characteristics of NTD5807NT4G?
- The MOSFET features low thermal resistance and is designed to efficiently dissipate heat, making it suitable for high-power applications.
Does NTD5807NT4G have built-in protection features?
- Yes, it has built-in protection against overcurrent, overvoltage, and thermal overload, enhancing its reliability in demanding environments.
What is the recommended operating temperature range for NTD5807NT4G?
- The recommended operating temperature range is typically between -55°C to 175°C, allowing for reliable performance in a wide range of conditions.
Can NTD5807NT4G be used in automotive applications?
- Yes, NTD5807NT4G is AEC-Q101 qualified, making it suitable for use in automotive systems where high reliability is essential.
What are the advantages of using NTD5807NT4G in power management solutions?
- The MOSFET offers low conduction and switching losses, high efficiency, and robustness, making it ideal for power management applications.
Are there any application notes or reference designs available for NTD5807NT4G?
- Yes, there are application notes and reference designs provided by the manufacturer to assist in the implementation of NTD5807NT4G in various technical solutions.
Where can I find detailed technical documentation for NTD5807NT4G?
- Detailed technical documentation, including datasheets, application notes, and design resources, can be found on the manufacturer's website or through authorized distributors.