MUN5312DW1T1G
Product Category: Semiconductor Devices
Basic Information Overview: - Category: Transistor - Use: Amplification and switching of electronic signals - Characteristics: High voltage, high speed, low power consumption - Package: SOT-363 - Essence: NPN Bipolar Junction Transistor (BJT) - Packaging/Quantity: Tape & Reel, 3000 units per reel
Specifications: - Collector-Base Voltage (VCBO): 50V - Collector-Emitter Voltage (VCEO): 45V - Emitter-Base Voltage (VEBO): 6V - Collector Current (IC): 100mA - Power Dissipation (PD): 200mW - Transition Frequency (fT): 250MHz - Operating Temperature Range: -55°C to +150°C
Detailed Pin Configuration: - Pin 1: Emitter - Pin 2: Base - Pin 3: Collector
Functional Features: - High voltage capability - Fast switching speed - Low leakage current - Miniature SOT-363 package for space-constrained applications
Advantages: - Suitable for high-speed switching applications - Compact package size - Low power consumption
Disadvantages: - Limited maximum collector current compared to other transistors in the same category - Sensitive to overvoltage conditions
Working Principles: The MUN5312DW1T1G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its three terminals to amplify or switch electronic signals.
Detailed Application Field Plans: - Audio amplification circuits - Switching circuits in portable electronic devices - Signal amplification in sensor interfaces
Detailed and Complete Alternative Models: - BC847B - 2N3904 - 2SC945
This comprehensive entry provides a detailed overview of the MUN5312DW1T1G, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
What is MUN5312DW1T1G?
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