MMBT4401WT1G

Introduction

The MMBT4401WT1G is a general-purpose NPN bipolar junction transistor (BJT) belonging to the category of small signal transistors. This device is commonly used in amplification and switching applications due to its high current gain and low saturation voltage. The MMBT4401WT1G is characterized by its compact SOT-323 package, making it suitable for space-constrained designs. This entry provides an overview of the MMBT4401WT1G, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Small Signal Transistor
• Use: Amplification and Switching Applications
• Characteristics: High Current Gain, Low Saturation Voltage
• Package: SOT-323
• Essence: General-Purpose NPN BJT
• Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

• Collector-Base Voltage (VCBO): 40V
• Collector-Emitter Voltage (VCEO): 40V
• Emitter-Base Voltage (VEBO): 5V
• Collector Current (IC): 600mA
• Total Power Dissipation (PTOT): 225mW
• Transition Frequency (fT): 250MHz
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The MMBT4401WT1G features a standard NPN transistor pinout with three terminals: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

• High Current Gain (hFE)
• Low Saturation Voltage
• Fast Switching Speed
• Compact Package Size

Advantages and Disadvantages

Advantages

• Versatile application in amplification and switching circuits
• Compact SOT-323 package for space-constrained designs
• High transition frequency for high-speed applications

Disadvantages

• Limited collector current compared to power transistors
• Moderate power dissipation capability

Working Principles

The MMBT4401WT1G operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current. In amplification applications, small variations in the base current result in larger changes in the collector current, making it suitable for signal amplification. In switching applications, the transistor can rapidly switch between on and off states, allowing for digital signal processing.

Detailed Application Field Plans

The MMBT4401WT1G finds extensive use in various electronic circuits, including: - Audio Amplifiers - Signal Processing Circuits - Switching Circuits - Oscillator Circuits - Sensor Interfaces

Detailed and Complete Alternative Models

• MMBT4401LT1G: Similar specifications with lower transition frequency
• MMBT4403WT1G: Complementary PNP transistor with similar characteristics
• MMBT3904WT1G: General-purpose NPN transistor with higher current and power ratings

In conclusion, the MMBT4401WT1G is a versatile small signal transistor suitable for amplification and switching applications in various electronic circuits. Its compact package, high current gain, and low saturation voltage make it an essential component in modern electronics.

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