The MJE13009G is a power transistor belonging to the category of high-voltage, high-speed switching transistors. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
The MJE13009G transistor has a standard TO-220 package with three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)
The MJE13009G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between the collector and emitter through the base terminal. When biased appropriately, it allows for efficient power amplification and switching.
The MJE13009G is commonly used in various high-power applications such as: - Switching power supplies - Electronic ballasts - Motor control circuits - Audio amplifiers - Inverters
In conclusion, the MJE13009G power transistor offers high voltage capability and fast switching speed, making it suitable for a wide range of power applications. Its robust characteristics and versatile nature make it a popular choice in various electronic designs.
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What is the maximum collector current of MJE13009G?
What is the maximum collector-emitter voltage of MJE13009G?
What are the typical applications of MJE13009G?
What is the typical gain (hFE) of MJE13009G?
What is the maximum power dissipation of MJE13009G?
Is MJE13009G suitable for use in audio amplifiers?
Does MJE13009G require a heat sink in typical applications?
What are the recommended operating conditions for MJE13009G?
Can MJE13009G be used in flyback converter circuits?
Are there any common failure modes associated with MJE13009G?