ON Semiconductor
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HUF76619D3ST
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HUF76619D3ST

Product Overview

Category

The HUF76619D3ST belongs to the category of power MOSFETs.

Use

It is commonly used in electronic circuits for switching and amplification applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The HUF76619D3ST is typically available in a TO-220 package.

Essence

This MOSFET is essential for controlling high-power loads in various electronic devices and systems.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 100V
  • Continuous Drain Current (ID): 75A
  • RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 60nC

Detailed Pin Configuration

The HUF76619D3ST typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High current handling capability
  • Low power dissipation
  • Suitable for high-frequency applications
  • Enhanced ruggedness and reliability

Advantages and Disadvantages

Advantages

  • Low on-resistance leads to reduced power losses
  • Fast switching speed allows for efficient operation
  • High voltage capability enables use in diverse applications

Disadvantages

  • Higher cost compared to standard MOSFETs
  • Requires careful handling due to sensitivity to electrostatic discharge

Working Principles

The HUF76619D3ST operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

Power Supplies

Utilized in high-power switch-mode power supplies for efficient energy conversion.

Motor Control

Integrated into motor drive circuits for precise control of electric motors.

Automotive Electronics

Used in automotive systems for controlling various functions such as lighting and power distribution.

Detailed and Complete Alternative Models

  • IRF1405
  • FDP8870
  • IPP60R190E6

In conclusion, the HUF76619D3ST power MOSFET offers high-performance characteristics suitable for a wide range of applications, from power supplies to automotive electronics. Its advanced features and robust design make it a preferred choice for demanding electronic circuit designs.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan HUF76619D3ST dalam solusi teknis

  1. What is HUF76619D3ST?

    • HUF76619D3ST is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) commonly used in electronic circuits for switching and amplification.

  2. What are the key specifications of HUF76619D3ST?

    • The key specifications include a drain-source voltage of 60V, continuous drain current of 13A, and low on-resistance.

  3. How can HUF76619D3ST be used in power management applications?

    • HUF76619D3ST can be used in power management applications such as DC-DC converters, motor control, and battery protection due to its high current handling capability and low on-resistance.

  4. What are the typical applications of HUF76619D3ST in automotive electronics?

    • In automotive electronics, HUF76619D3ST is commonly used in lighting control, power distribution, and motor drive systems due to its robustness and high current handling capacity.

  5. What are the thermal considerations when using HUF76619D3ST in high-power applications?

    • Proper heat sinking and thermal management are crucial when using HUF76619D3ST in high-power applications to ensure efficient dissipation of heat and prevent overheating.

  6. Can HUF76619D3ST be used in audio amplifier circuits?

    • While HUF76619D3ST is primarily designed for power management and switching applications, it can also be utilized in audio amplifier circuits where high current handling is required.

  7. What are the recommended operating conditions for HUF76619D3ST?

    • The recommended operating conditions typically include a specified range of drain-source voltage, gate-source voltage, and ambient temperature to ensure optimal performance and reliability.

  8. How does HUF76619D3ST compare to other MOSFETs in terms of performance and cost?

    • HUF76619D3ST offers a balance of performance, cost-effectiveness, and reliability compared to other MOSFETs, making it a popular choice in various technical solutions.

  9. Are there any application notes or reference designs available for integrating HUF76619D3ST into circuit designs?

    • Yes, manufacturers often provide application notes, reference designs, and simulation models to assist engineers in effectively integrating HUF76619D3ST into their circuit designs.

  10. What are the potential challenges or limitations when using HUF76619D3ST in technical solutions?

    • Some potential challenges may include proper ESD protection, understanding the gate drive requirements, and ensuring compatibility with the overall system design to maximize the benefits of HUF76619D3ST.