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FQB9N50CFTM

FQB9N50CFTM

Introduction

The FQB9N50CFTM is a power MOSFET belonging to the category of electronic components. This entry provides an overview of its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

  • Category: Electronic Components
  • Use: Power MOSFET for electronic circuits
  • Characteristics: High power handling capacity, low on-state resistance, fast switching speed
  • Package: TO-263-3 (D2PAK)
  • Essence: Power management in electronic devices
  • Packaging/Quantity: Typically packaged in reels or tubes, quantity varies by manufacturer

Specifications

  • Voltage Rating: 500V
  • Current Rating: 9A
  • On-State Resistance: 0.9Ω
  • Gate Threshold Voltage: 2-4V
  • Operating Temperature Range: -55°C to 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3

Detailed Pin Configuration

  1. Source (S)
  2. Gate (G)
  3. Drain (D)

Functional Features

  • High voltage capability
  • Low gate charge
  • Enhanced avalanche energy
  • Fast switching speed
  • Low on-state resistance

Advantages and Disadvantages

Advantages

  • Efficient power management
  • Suitable for high-frequency applications
  • Low power dissipation
  • Compact package size

Disadvantages

  • Sensitivity to overvoltage conditions
  • Limited current handling compared to some higher-rated MOSFETs

Working Principles

The FQB9N50CFTM operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. When the gate-source voltage exceeds the threshold, the MOSFET enters the conducting state, allowing current to flow through it.

Detailed Application Field Plans

The FQB9N50CFTM is commonly used in the following applications: - Switched-mode power supplies - Motor control circuits - Inverters and converters - Electronic ballasts - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the FQB9N50CFTM include: - IRF9Z34N: Similar voltage and current ratings - STW9NK90Z: Comparable characteristics and package type - FQPF9N50C: Alternative from the same manufacturer with similar specifications

In conclusion, the FQB9N50CFTM is a versatile power MOSFET suitable for various electronic applications, offering efficient power management and fast switching capabilities.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan FQB9N50CFTM dalam solusi teknis

  1. What is the maximum drain-source voltage of FQB9N50CFTM?

    • The maximum drain-source voltage of FQB9N50CFTM is 500V.
  2. What is the continuous drain current rating of FQB9N50CFTM?

    • The continuous drain current rating of FQB9N50CFTM is 9A.
  3. What is the on-resistance of FQB9N50CFTM?

    • The on-resistance of FQB9N50CFTM is typically 0.9 ohms.
  4. What is the gate threshold voltage of FQB9N50CFTM?

    • The gate threshold voltage of FQB9N50CFTM typically ranges from 2 to 4 volts.
  5. What are the typical applications of FQB9N50CFTM?

    • FQB9N50CFTM is commonly used in power supplies, motor control, and lighting applications.
  6. What is the operating temperature range of FQB9N50CFTM?

    • The operating temperature range of FQB9N50CFTM is typically -55°C to 150°C.
  7. Is FQB9N50CFTM suitable for high-frequency switching applications?

    • Yes, FQB9N50CFTM is suitable for high-frequency switching due to its low on-resistance and fast switching characteristics.
  8. Does FQB9N50CFTM require a heat sink for operation?

    • It is recommended to use a heat sink when operating FQB9N50CFTM at high currents or in high-temperature environments.
  9. What is the gate charge of FQB9N50CFTM?

    • The gate charge of FQB9N50CFTM is typically around 20nC.
  10. Is FQB9N50CFTM RoHS compliant?

    • Yes, FQB9N50CFTM is RoHS compliant, making it suitable for environmentally friendly electronic designs.