FQB55N06TM - Semiconductor Device Encyclopedia Entry

Introduction

The FQB55N06TM is a semiconductor device belonging to the category of power MOSFETs. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the FQB55N06TM.

Basic Information Overview

• Category: Power MOSFET
• Use: The FQB55N06TM is commonly used in power supply applications, motor control, and other high-power switching circuits.
• Characteristics: It exhibits low on-resistance, high current capability, and fast switching speed.
• Package: TO-263 (D2PAK)
• Essence: The FQB55N06TM is designed to efficiently handle high power levels while minimizing losses.
• Packaging/Quantity: Typically packaged in reels or tubes containing a specified quantity per package.

Specifications

• Voltage Rating: 60V
• Current Rating: 55A
• On-Resistance: 0.022 ohms
• Gate Threshold Voltage: 2.0V
• Power Dissipation: 200W

Detailed Pin Configuration

The FQB55N06TM typically has three pins: 1. Gate (G): Controls the conductivity between the source and drain terminals. 2. Drain (D): Connects to the load and the positive supply voltage. 3. Source (S): Connected to the ground or the negative side of the circuit.

Functional Features

• High current-carrying capability
• Low on-resistance for reduced power losses
• Fast switching speed for efficient operation

Advantages and Disadvantages

Advantages

• Efficient power handling
• Fast switching characteristics
• Low on-resistance

Disadvantages

• Sensitivity to overvoltage conditions
• Gate drive requirements may be more critical compared to some alternative models

Working Principles

The FQB55N06TM operates based on the principle of field-effect transistors, where the gate voltage controls the conductivity between the source and drain terminals, allowing for efficient power switching and control.

Detailed Application Field Plans

The FQB55N06TM finds extensive use in various applications, including: - Power supply units - Motor control systems - Inverters and converters - High-power switching circuits

Detailed and Complete Alternative Models

Some alternative models to the FQB55N06TM include: - IRF540N - STP55NF06L - FDP55N06

In summary, the FQB55N06TM power MOSFET offers high current capability, low on-resistance, and fast switching speed, making it suitable for diverse high-power applications. Understanding its specifications, pin configuration, functional features, and application field plans can aid in its effective utilization within electronic circuits. Additionally, awareness of alternative models provides flexibility in component selection based on specific design requirements.