FQB2N80TM - Product Overview

Introduction

The FQB2N80TM is a power MOSFET belonging to the category of electronic components used in various applications. This entry provides an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Power MOSFET
• Use: The FQB2N80TM is commonly used in power supply, motor control, and other high-power switching applications.
• Characteristics: It exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
• Package: The FQB2N80TM is typically available in TO-263 packaging.
• Essence: Its essence lies in providing efficient power switching capabilities.
• Packaging/Quantity: It is usually packaged in reels or tubes, with varying quantities based on manufacturer specifications.

Specifications

• Voltage Rating: 800V
• Current Rating: 2A
• On-State Resistance: 1.6Ω
• Gate Charge: 15nC
• Operating Temperature Range: -55°C to 150°C
• Datasheet: FQB2N80TM Datasheet

Detailed Pin Configuration

The FQB2N80TM typically consists of three pins: Gate (G), Drain (D), and Source (S). The pin configuration is as follows: - Gate (G): Input pin for controlling the switching operation. - Drain (D): Output pin connected to the load. - Source (S): Common pin for the input and output circuits.

Functional Features

• High Efficiency: Due to its low on-state resistance and gate charge, the FQB2N80TM enables high-efficiency power conversion.
• Fast Switching Speed: It offers rapid switching characteristics, reducing switching losses in high-frequency applications.
• Reliability: With its robust design, the MOSFET ensures reliable performance in demanding environments.

Advantages and Disadvantages

Advantages

• High efficiency in power conversion
• Fast switching speed
• Reliable performance in demanding conditions

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to voltage and current spikes

Working Principles

The FQB2N80TM operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate voltage, the MOSFET can efficiently switch high-power loads on and off.

Detailed Application Field Plans

The FQB2N80TM finds extensive use in the following applications: - Power Supplies: Used in high-voltage power supply units for efficient power management. - Motor Control: Employed in motor drive circuits for controlling the speed and direction of motors. - Switching Converters: Integrated into DC-DC converters for high-efficiency power conversion.

Detailed and Complete Alternative Models

Some alternative models to the FQB2N80TM include: - IRF840: A similar power MOSFET with comparable voltage and current ratings. - STP16NF06: Offers similar characteristics and is suitable for power switching applications. - IXFH50N80: An alternative MOSFET with enhanced current-handling capabilities.

In conclusion, the FQB2N80TM power MOSFET serves as a crucial component in various high-power applications, offering high efficiency, fast switching speed, and reliability. Understanding its specifications, functional features, and application field plans is essential for leveraging its capabilities effectively.

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