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DTA114TM3T5G

DTA114TM3T5G

Introduction

The DTA114TM3T5G is a versatile transistor that belongs to the category of bipolar junction transistors (BJTs). This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the DTA114TM3T5G.

Basic Information Overview

  • Category: Bipolar Junction Transistor (BJT)
  • Use: Amplification and switching in electronic circuits
  • Characteristics: High current gain, low saturation voltage
  • Package: SOT-23
  • Essence: Small signal NPN transistor
  • Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 200mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The DTA114TM3T5G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

  • High current gain
  • Low noise
  • Fast switching speed
  • Low saturation voltage

Advantages and Disadvantages

Advantages

  • Small package size
  • Suitable for high-density surface mount applications
  • Low power consumption

Disadvantages

  • Limited power handling capability
  • Susceptible to thermal runaway if not properly heat-sinked

Working Principles

The DTA114TM3T5G operates based on the principles of amplification and control of current flow. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals, allowing for signal amplification or switching.

Detailed Application Field Plans

The DTA114TM3T5G is commonly used in various electronic applications, including: - Audio amplifiers - Signal processing circuits - Switching circuits - Sensor interfaces

Detailed and Complete Alternative Models

Some alternative models to the DTA114TM3T5G include: - BC547 - 2N2222 - 2N3904 - BC548

In conclusion, the DTA114TM3T5G is a small signal NPN transistor with versatile applications in amplification and switching circuits. Its compact size, high current gain, and low saturation voltage make it suitable for various electronic designs.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan DTA114TM3T5G dalam solusi teknis

  1. What is the maximum continuous collector current of DTA114TM3T5G?

    • The maximum continuous collector current of DTA114TM3T5G is 100mA.
  2. What is the typical DC current gain (hFE) of DTA114TM3T5G?

    • The typical DC current gain (hFE) of DTA114TM3T5G is 100-400.
  3. What is the maximum collector-emitter voltage (VCEO) of DTA114TM3T5G?

    • The maximum collector-emitter voltage (VCEO) of DTA114TM3T5G is 50V.
  4. What are the typical applications for DTA114TM3T5G?

    • Typical applications for DTA114TM3T5G include general-purpose switching and amplification in electronic circuits.
  5. What is the thermal resistance of DTA114TM3T5G?

    • The thermal resistance of DTA114TM3T5G is approximately 625°C/W.
  6. Is DTA114TM3T5G suitable for low-power applications?

    • Yes, DTA114TM3T5G is suitable for low-power applications due to its low collector current and voltage ratings.
  7. Can DTA114TM3T5G be used in audio amplifier circuits?

    • Yes, DTA114TM3T5G can be used in audio amplifier circuits, especially in low-power applications.
  8. What is the package type of DTA114TM3T5G?

    • DTA114TM3T5G comes in a SOT-416 package.
  9. Does DTA114TM3T5G require external heat sinking?

    • In most cases, DTA114TM3T5G does not require external heat sinking due to its low power dissipation.
  10. What are the recommended operating conditions for DTA114TM3T5G?

    • The recommended operating conditions for DTA114TM3T5G include a collector current of 10-100mA, a collector-emitter voltage of 50V, and an ambient temperature range of -55°C to 150°C.