ON Semiconductor
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DTA114EET1G
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DTA114EET1G

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Small signal NPN bipolar junction transistor, low voltage operation, high current capability
Package: SOT-23
Essence: High performance in a compact package
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 225mW
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

E | | B / \ / \ C C

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • Small footprint

Advantages

  • Compact size
  • High current capability
  • Wide operating temperature range

Disadvantages

  • Limited power dissipation
  • Moderate transition frequency

Working Principles

The DTA114EET1G operates as a small signal NPN bipolar junction transistor. When a small current is applied to the base terminal, it allows a larger current to flow between the collector and emitter terminals, effectively amplifying the input signal.

Detailed Application Field Plans

  • Audio amplification circuits
  • Switching circuits in electronic devices
  • Sensor interface circuits

Detailed and Complete Alternative Models

  • BC547B
  • 2N3904
  • KSP2222A
  • MMBT3904

This comprehensive entry provides an in-depth understanding of the DTA114EET1G, covering its product overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Word count: 270

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan DTA114EET1G dalam solusi teknis

Sure, here are 10 common questions and answers related to the application of DTA114EET1G in technical solutions:

  1. What is the DTA114EET1G?

    • The DTA114EET1G is a PNP digital transistor designed for use in various technical solutions.

  2. What are the typical applications of DTA114EET1G?

    • It is commonly used in switching and amplification circuits in consumer electronics, industrial automation, and automotive applications.

  3. What is the maximum collector current of DTA114EET1G?

    • The maximum collector current is 100mA, making it suitable for low-power applications.

  4. What is the voltage rating of DTA114EET1G?

    • The maximum voltage rating is 50V, which is suitable for many low-voltage applications.

  5. What is the gain (hFE) of DTA114EET1G?

    • The typical DC current gain (hFE) is around 100 to 300 at a collector current of 10mA.

  6. Is DTA114EET1G suitable for high-speed switching applications?

    • No, it is not designed for high-speed switching due to its moderate transition frequency.

  7. Can DTA114EET1G be used in audio amplifier circuits?

    • Yes, it can be used in low-power audio amplifier circuits and signal processing applications.

  8. What are the thermal characteristics of DTA114EET1G?

    • It has a low thermal resistance and is suitable for use in space-constrained designs.

  9. Does DTA114EET1G require external biasing components?

    • No, it has built-in biasing resistors, simplifying circuit design.

  10. Are there any specific layout considerations for using DTA114EET1G?

    • It is recommended to minimize lead lengths and ensure proper heat dissipation for optimal performance.

I hope these questions and answers provide helpful information about the application of DTA114EET1G in technical solutions. Let me know if you need further assistance!