ON Semiconductor
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2N7000-D26Z
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2N7000-D26Z

Product Overview

Category

The 2N7000-D26Z belongs to the category of small-signal field-effect transistors (FETs).

Use

It is commonly used as a switch in electronic circuits, particularly in low-power applications.

Characteristics

  • Low on-resistance
  • Fast switching speed
  • Small package size
  • Low input capacitance

Package

The 2N7000-D26Z is typically available in a TO-92 package.

Essence

This FET serves as a fundamental component in electronic circuit design, enabling efficient control of current flow.

Packaging/Quantity

It is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 60V
  • Continuous Drain Current (ID): 200mA
  • Total Power Dissipation (PD): 350mW
  • Gate-Source Voltage (VGS): ±20V
  • Operating and Storage Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The 2N7000-D26Z features three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low threshold voltage
  • High input impedance
  • Compatibility with digital and analog circuits

Advantages and Disadvantages

Advantages

  • Small size
  • Low cost
  • Versatile application range

Disadvantages

  • Limited power handling capability
  • Sensitivity to static electricity

Working Principles

The 2N7000-D26Z operates based on the modulation of the conductivity of a semiconductor channel by the electric field applied across the gate-source terminals.

Detailed Application Field Plans

Low-Power Switching Circuits

The FET can be utilized in various low-power switching applications, such as relay drivers and LED drivers.

Signal Amplification

In some cases, the 2N7000-D26Z can be employed for signal amplification in audio and sensor circuits.

Detailed and Complete Alternative Models

  • BS170: Similar small-signal FET with comparable characteristics
  • 2N7002: Alternative option with slightly different specifications

In conclusion, the 2N7000-D26Z is a versatile small-signal FET that finds widespread use in low-power electronic circuits due to its compact size, fast switching speed, and low on-resistance. While it has limitations in power handling, its cost-effectiveness and broad application range make it a popular choice among electronics designers.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan 2N7000-D26Z dalam solusi teknis

  1. What is the maximum drain-source voltage of 2N7000-D26Z?

    • The maximum drain-source voltage of 2N7000-D26Z is 60V.

  2. What is the continuous drain current rating of 2N7000-D26Z?

    • The continuous drain current rating of 2N7000-D26Z is 200mA.

  3. What is the typical threshold voltage of 2N7000-D26Z?

    • The typical threshold voltage of 2N7000-D26Z is 2.1V.

  4. Can 2N7000-D26Z be used for low-power switching applications?

    • Yes, 2N7000-D26Z is suitable for low-power switching applications due to its low threshold voltage and moderate drain current rating.

  5. Is 2N7000-D26Z suitable for level shifting applications?

    • Yes, 2N7000-D26Z can be used for level shifting applications due to its low threshold voltage and compatibility with logic level signals.

  6. What are the typical applications of 2N7000-D26Z in technical solutions?

    • Typical applications of 2N7000-D26Z include small signal switching, level shifting, and low-power control circuits.

  7. Does 2N7000-D26Z require a heat sink for normal operation?

    • No, 2N7000-D26Z typically does not require a heat sink for normal operation due to its low power dissipation characteristics.

  8. What is the maximum junction temperature of 2N7000-D26Z?

    • The maximum junction temperature of 2N7000-D26Z is 150°C.

  9. Can 2N7000-D26Z be used in battery-powered applications?

    • Yes, 2N7000-D26Z is suitable for battery-powered applications due to its low power consumption and low threshold voltage.

  10. Are there any common failure modes associated with 2N7000-D26Z?

    • Common failure modes for 2N7000-D26Z include overvoltage stress leading to breakdown and excessive power dissipation causing thermal damage. Proper voltage and current limitations should be observed to prevent these failures.