ON Semiconductor
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2N5771_D26Z
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2N5771_D26Z

Product Overview

  • Category: Transistor
  • Use: Amplification and switching in electronic circuits
  • Characteristics: High voltage, high current capability
  • Package: TO-92
  • Essence: NPN Bipolar Junction Transistor
  • Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Type: NPN
  • Maximum Collector-Emitter Voltage (Vce): 160V
  • Maximum Collector Current (Ic): 1A
  • Power Dissipation (Pd): 625mW
  • Transition Frequency (ft): 40MHz
  • Operating Temperature Range: -65°C to 200°C

Detailed Pin Configuration

  • Collector (C): Pin 1
  • Base (B): Pin 2
  • Emitter (E): Pin 3

Functional Features

  • High voltage and current gain
  • Fast switching speed
  • Low noise

Advantages

  • Suitable for high-power applications
  • Wide operating temperature range
  • Versatile in electronic circuit designs

Disadvantages

  • Sensitive to temperature variations
  • Limited frequency response compared to some alternatives

Working Principles

The 2N5771_D26Z operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify or switch electronic signals.

Detailed Application Field Plans

  • Audio amplifiers
  • Power supply circuits
  • Motor control systems
  • RF amplifiers

Detailed and Complete Alternative Models

  • 2N3904
  • BC547
  • 2N2222
  • BC548

This comprehensive entry provides an in-depth understanding of the 2N5771_D26Z transistor, covering its specifications, features, applications, and alternatives.

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan 2N5771_D26Z dalam solusi teknis

  1. What is the 2N5771_D26Z transistor used for?

    • The 2N5771_D26Z is a general-purpose PNP transistor commonly used for amplification and switching applications.

  2. What are the typical operating conditions for the 2N5771_D26Z?

    • The 2N5771_D26Z operates with a maximum collector current of 500mA, a maximum collector-emitter voltage of 160V, and a maximum power dissipation of 625mW.

  3. Can the 2N5771_D26Z be used for audio amplification?

    • Yes, the 2N5771_D26Z can be used for small-signal audio amplification due to its low noise and high gain characteristics.

  4. Is the 2N5771_D26Z suitable for switching applications?

    • Yes, the 2N5771_D26Z can be used for low-power switching applications due to its moderate switching speed and current-handling capabilities.

  5. What are the typical circuit configurations for using the 2N5771_D26Z as an amplifier?

    • The 2N5771_D26Z can be configured in common emitter or common base configurations for amplification purposes.

  6. Are there any specific thermal considerations when using the 2N5771_D26Z?

    • It is important to consider proper heat sinking for the 2N5771_D26Z to ensure it operates within its specified temperature range and to prevent thermal runaway.

  7. Can the 2N5771_D26Z be used in high-frequency applications?

    • While the 2N5771_D26Z has moderate frequency capabilities, it may not be suitable for very high-frequency applications due to its transition frequency limitations.

  8. What are the typical complementary transistors that can be paired with the 2N5771_D26Z?

    • The 2N5771_D26Z can be paired with NPN transistors such as the 2N3904 or 2N2222 for complementary circuit designs.

  9. Does the 2N5771_D26Z require any special biasing considerations?

    • Proper biasing is essential for the 2N5771_D26Z to ensure it operates within its linear region and to achieve the desired amplification or switching characteristics.

  10. Are there any common failure modes associated with the 2N5771_D26Z?

    • Common failure modes include thermal overstress, exceeding maximum ratings, and improper handling during soldering or mounting processes.