ON Semiconductor
Gambar mungkin merupakan representasi.
Lihat spesifikasi untuk detail produk.
2N5551TFR
Lihat Detail Lembar Data

2N5551TFR

Product Overview

The 2N5551TFR is a general-purpose PNP bipolar junction transistor (BJT) designed for various electronic applications. This semiconductor device falls under the category of discrete transistors and is commonly used in amplification, switching, and voltage regulation circuits. The 2N5551TFR exhibits characteristics such as high current gain, low noise, and low power dissipation. It is typically available in a TO-92 package and is sold in quantities suitable for both hobbyist and industrial applications.

Specifications

  • Maximum Collector-Emitter Voltage: 160V
  • Maximum Collector-Base Voltage: 160V
  • Maximum Emitter-Base Voltage: 5V
  • Continuous Collector Current: 600mA
  • Power Dissipation: 625mW
  • Transition Frequency: 150MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2N5551TFR transistor has three pins: the emitter (E), base (B), and collector (C). In a TO-92 package, the pin configuration is as follows: - Pin 1: Emitter - Pin 2: Base - Pin 3: Collector

Functional Features

The 2N5551TFR offers high current gain, making it suitable for use in amplification circuits. Its low noise characteristic makes it ideal for signal processing applications. Additionally, its low power dissipation ensures minimal heat generation during operation.

Advantages and Disadvantages

Advantages

  • High current gain
  • Low noise
  • Low power dissipation
  • Versatile applications

Disadvantages

  • Moderate transition frequency
  • Limited maximum collector current

Working Principles

The 2N5551TFR operates based on the principles of bipolar junction transistors. When a small current flows into the base terminal, it controls a larger current between the collector and emitter terminals. This property allows the transistor to amplify signals or act as a switch in electronic circuits.

Detailed Application Field Plans

The 2N5551TFR finds extensive use in audio amplifiers, voltage regulators, and signal processing circuits. Its high current gain makes it suitable for low-power amplification, while its low noise characteristic ensures clean signal processing. Additionally, it can be employed in switching applications due to its ability to control larger currents.

Detailed and Complete Alternative Models

  • BC557: A complementary PNP transistor with similar characteristics
  • 2N3906: Another PNP transistor suitable for general-purpose applications
  • BC327: A low power PNP transistor commonly used in audio amplifiers

In conclusion, the 2N5551TFR is a versatile PNP transistor with a wide range of applications in electronic circuits. Its high current gain, low noise, and low power dissipation make it an essential component in various electronic designs.

Word Count: 345

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan 2N5551TFR dalam solusi teknis

  1. What is the 2N5551TFR transistor used for?

    • The 2N5551TFR is a general-purpose PNP bipolar junction transistor commonly used in amplification and switching applications.

  2. What are the typical operating conditions for the 2N5551TFR?

    • The 2N5551TFR typically operates at a maximum collector-emitter voltage of 160V and a collector current of 600mA.

  3. How do I identify the pinout of the 2N5551TFR transistor?

    • The pinout of the 2N5551TFR is typically Emitter (E), Base (B), and Collector (C).

  4. Can the 2N5551TFR be used for audio amplification?

    • Yes, the 2N5551TFR can be used in low-power audio amplifier circuits due to its moderate voltage and current ratings.

  5. What are some common alternatives to the 2N5551TFR?

    • Common alternatives to the 2N5551TFR include the BC557, BC558, and 2N3906 transistors.

  6. Are there any specific considerations for heat dissipation when using the 2N5551TFR?

    • It's important to consider heat dissipation when operating the 2N5551TFR near its maximum ratings, and proper heatsinking may be required.

  7. Can the 2N5551TFR be used in high-frequency applications?

    • While the 2N5551TFR can function at moderate frequencies, it may not be suitable for high-frequency applications due to its transition frequency characteristics.

  8. What are the typical gain characteristics of the 2N5551TFR?

    • The DC current gain (hFE) of the 2N5551TFR typically ranges from 120 to 300 under specified test conditions.

  9. Is the 2N5551TFR suitable for use in switching power supply designs?

    • The 2N5551TFR can be used in low-power switching applications, but higher power designs may require transistors with higher current and voltage ratings.

  10. Are there any special precautions for handling and static discharge protection for the 2N5551TFR?

    • As with all sensitive electronic components, proper ESD (electrostatic discharge) handling procedures should be followed to prevent damage to the 2N5551TFR during assembly and handling.