ON Semiconductor
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2N5551TA
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2N5551TA Transistor

Product Overview

The 2N5551TA transistor is a versatile electronic component belonging to the category of small-signal transistors. It is commonly used in amplification and switching applications due to its high frequency and low power characteristics. The 2N5551TA comes in a TO-92 package and is available in various packaging quantities, making it suitable for a wide range of electronic projects.

Specifications

  • Maximum Power Dissipation: 625mW
  • Collector-Base Voltage: 160V
  • Collector-Emitter Voltage: 160V
  • Emitter-Base Voltage: 6V
  • Collector Current: 600mA
  • DC Current Gain (hFE): 120-240
  • Transition Frequency: 150MHz

Detailed Pin Configuration

The 2N5551TA transistor has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

The 2N5551TA transistor offers high voltage and current capabilities, making it suitable for amplification of weak signals and switching applications. Its low power consumption and high frequency response make it ideal for use in audio amplifiers, signal processing circuits, and oscillator circuits.

Advantages and Disadvantages

Advantages

  • High voltage and current ratings
  • Low power consumption
  • High frequency response

Disadvantages

  • Moderate DC current gain
  • Limited maximum power dissipation

Working Principles

The 2N5551TA operates based on the principles of semiconductor physics. When a small current flows into the base terminal, it controls a much larger current between the collector and emitter terminals, allowing for amplification or switching of electronic signals.

Detailed Application Field Plans

The 2N5551TA transistor finds extensive use in the following applications: - Audio Amplifiers - Signal Processing Circuits - Oscillator Circuits - Switching Circuits

Detailed and Complete Alternative Models

Some alternative models to the 2N5551TA transistor include: - BC547 - 2N3904 - 2N2222

In conclusion, the 2N5551TA transistor is a versatile component with high voltage and current capabilities, making it suitable for a wide range of amplification and switching applications in electronic circuits.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan 2N5551TA dalam solusi teknis

  1. What is the 2N5551TA transistor used for?

    • The 2N5551TA is a general-purpose PNP bipolar junction transistor commonly used in amplification and switching applications.

  2. What are the typical operating conditions for the 2N5551TA?

    • The 2N5551TA operates under a maximum collector-emitter voltage of 160V and a collector current of 600mA.

  3. Can the 2N5551TA be used for audio amplification?

    • Yes, the 2N5551TA can be used for small-signal audio amplification due to its low noise and high gain characteristics.

  4. How do I connect the 2N5551TA in a common-emitter configuration?

    • In a common-emitter configuration, the input signal is applied to the base, the output is taken from the collector, and the emitter is grounded through a resistor.

  5. What are some common alternatives to the 2N5551TA?

    • Common alternatives to the 2N5551TA include the BC557, BC558, and 2N3906 transistors, which have similar characteristics and pinouts.

  6. What are the thermal considerations when using the 2N5551TA in a circuit?

    • It's important to ensure proper heat sinking for the 2N5551TA, especially when operating at higher currents or power levels, to prevent overheating and potential damage.

  7. Can the 2N5551TA be used in high-frequency applications?

    • While the 2N5551TA has limited high-frequency performance, it can still be used in low-to-moderate frequency applications such as audio amplification and general switching.

  8. What are the typical gain characteristics of the 2N5551TA?

    • The DC current gain (hFE) of the 2N5551TA typically ranges from 120 to 300, making it suitable for various amplification tasks.

  9. How do I determine the appropriate biasing for the 2N5551TA in a specific circuit?

    • The biasing of the 2N5551TA depends on the specific application and desired operating point, and can be determined using standard transistor biasing techniques such as fixed bias, emitter bias, or voltage-divider bias.

  10. Are there any special considerations for handling and storage of the 2N5551TA?

    • The 2N5551TA should be handled with care to avoid electrostatic discharge (ESD) damage, and stored in anti-static packaging or containers to maintain its reliability and performance.