ON Semiconductor
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2N5401RL1G
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2N5401RL1G

Product Overview

The 2N5401RL1G belongs to the category of small signal transistors and is commonly used in electronic circuits for amplification, switching, and regulation. This NPN bipolar junction transistor (BJT) exhibits high voltage and current capabilities, making it suitable for a wide range of applications. The 2N5401RL1G is characterized by its low noise, high gain, and excellent linearity, packaged in a compact and durable form.

Basic Information

  • Category: Small Signal Transistor
  • Use: Amplification, Switching, Regulation
  • Characteristics: Low Noise, High Gain, High Voltage and Current Capabilities
  • Package: SOT-223
  • Essence: NPN Bipolar Junction Transistor
  • Packaging/Quantity: Reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (Vcbo): 160V
  • Collector-Emitter Voltage (Vceo): 150V
  • Emitter-Base Voltage (Vebo): 6V
  • Collector Current (Ic): 600mA
  • Power Dissipation (Pd): 625mW
  • Transition Frequency (ft): 150MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The 2N5401RL1G features a standard SOT-223 package with three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High Voltage and Current Capabilities
  • Low Noise and High Gain
  • Compact SOT-223 Package

Advantages and Disadvantages

Advantages

  • High Voltage and Current Ratings
  • Low Noise and High Linearity
  • Compact and Durable Package

Disadvantages

  • Limited Power Dissipation
  • Moderate Transition Frequency

Working Principles

The 2N5401RL1G operates based on the principles of NPN BJT, where the flow of current is controlled by the voltage applied at the base terminal. It amplifies small variations in input voltage to produce larger output signals, making it suitable for various signal processing applications.

Detailed Application Field Plans

The 2N5401RL1G finds extensive use in audio amplifiers, voltage regulators, and signal processing circuits due to its high gain and low noise characteristics. Additionally, it is employed in sensor interfaces and precision analog circuits where signal fidelity is crucial.

Detailed and Complete Alternative Models

  • BC547B: Similar NPN BJT with lower voltage and current ratings
  • 2N3904: General-purpose NPN BJT with comparable characteristics
  • BC548C: NPN BJT with higher current capabilities

In conclusion, the 2N5401RL1G is a versatile small signal transistor that offers high voltage and current capabilities, making it suitable for a wide range of electronic applications.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan 2N5401RL1G dalam solusi teknis

  1. What is the 2N5401RL1G transistor used for?

    • The 2N5401RL1G is a PNP bipolar junction transistor commonly used for amplification and switching applications in electronic circuits.

  2. What are the key specifications of the 2N5401RL1G transistor?

    • The 2N5401RL1G has a maximum collector current (Ic) of 600mA, a maximum collector-emitter voltage (Vce) of 150V, and a maximum power dissipation (Pd) of 625mW.

  3. How can I identify the pinout of the 2N5401RL1G transistor?

    • The pinout of the 2N5401RL1G is typically Emitter-Base-Collector (EBC), with the flat side facing towards you and the pins down, the left pin is the emitter, the middle pin is the base, and the right pin is the collector.

  4. What are some common circuit configurations using the 2N5401RL1G transistor?

    • The 2N5401RL1G can be used in common emitter, common collector, and emitter follower configurations for various amplification and switching purposes.

  5. What are the typical applications of the 2N5401RL1G transistor?

    • The 2N5401RL1G is commonly used in audio amplifiers, voltage regulators, signal processing circuits, and general purpose switching circuits.

  6. What are the recommended operating conditions for the 2N5401RL1G transistor?

    • The 2N5401RL1G operates best within a temperature range of -55°C to 150°C and should be used with appropriate biasing and current limiting resistors.

  7. How do I calculate the base resistor value for driving the 2N5401RL1G transistor?

    • The base resistor value can be calculated using the formula: Rb = (Vcc - Vbe) / Ib, where Vcc is the supply voltage, Vbe is the base-emitter voltage, and Ib is the base current.

  8. What are the typical gain characteristics of the 2N5401RL1G transistor?

    • The DC current gain (hfe) of the 2N5401RL1G typically ranges from 100 to 300, depending on the operating conditions and biasing.

  9. Can the 2N5401RL1G be used in high-frequency applications?

    • While the 2N5401RL1G can be used in moderate frequency applications, it may not be suitable for very high-frequency applications due to its transition frequency limitations.

  10. Where can I find detailed datasheets and application notes for the 2N5401RL1G transistor?

    • Detailed datasheets and application notes for the 2N5401RL1G can be found on semiconductor manufacturer websites or distributor platforms such as Digi-Key, Mouser, or Newark.