ON Semiconductor
Gambar mungkin merupakan representasi.
Lihat spesifikasi untuk detail produk.
2N3859A_D75Z
Lihat Detail Lembar Data

2N3859A_D75Z

Product Overview

The 2N3859AD75Z is a high-frequency, low-noise NPN transistor designed for use in various electronic applications. This transistor belongs to the category of discrete semiconductor components and is commonly used in amplification circuits due to its low noise characteristics. The 2N3859AD75Z comes in a small package and is known for its high reliability and performance consistency. It is typically sold in bulk quantities to meet the demands of electronic manufacturers.

Basic Information

  • Category: Discrete Semiconductor Component
  • Use: Amplification Circuits
  • Characteristics: High-Frequency, Low-Noise
  • Package: Small form factor
  • Essence: High Reliability and Performance Consistency
  • Packaging/Quantity: Bulk packaging

Specifications

  • Type: NPN
  • Maximum Power Dissipation: 350 mW
  • Maximum Collector-Base Voltage: 25 V
  • Maximum Collector Current: 50 mA
  • Transition Frequency: 800 MHz
  • Noise Figure: 1.5 dB

Detailed Pin Configuration

The 2N3859A_D75Z transistor has three pins: 1. Emitter (E): Connected to the ground or the source of the input signal. 2. Base (B): Controls the transistor's conductivity when a small current is applied. 3. Collector (C): Outputs the amplified signal.

Functional Features

  • High-Frequency Operation: Suitable for applications requiring high-speed signal processing.
  • Low Noise Figure: Ideal for amplification of weak signals without introducing significant noise.
  • Wide Operating Temperature Range: Can function reliably in various environmental conditions.

Advantages and Disadvantages

Advantages

  • Low Noise: Enables amplification of weak signals with minimal distortion.
  • High Reliability: Consistent performance over time and under varying conditions.
  • Compact Package: Suitable for space-constrained electronic designs.

Disadvantages

  • Limited Power Handling: Not suitable for high-power applications.
  • Narrow Voltage Range: Requires careful voltage management to prevent damage.

Working Principles

The 2N3859A_D75Z operates based on the principles of bipolar junction transistors. When a small current is applied to the base terminal, it controls the larger current flow between the collector and emitter terminals. This amplification process allows the transistor to boost the strength of input signals while maintaining low noise levels.

Detailed Application Field Plans

The 2N3859A_D75Z is commonly used in the following applications: - Radio Frequency (RF) Amplifiers - Low-Noise Audio Amplifiers - Oscillator Circuits - Signal Processing Systems

Detailed and Complete Alternative Models

  • 2N5179: Similar high-frequency, low-noise NPN transistor with comparable specifications.
  • MPSH10: NPN transistor suitable for high-frequency applications with low noise characteristics.

In conclusion, the 2N3859A_D75Z transistor offers reliable and low-noise amplification capabilities, making it a preferred choice for various electronic applications that require high-frequency operation and minimal signal distortion.

[Word Count: 470]

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan 2N3859A_D75Z dalam solusi teknis

Sure, here are 10 common questions and answers related to the application of 2N3859A_D75Z in technical solutions:

  1. What is the 2N3859A_D75Z transistor used for?

    • The 2N3859A_D75Z is a high-frequency NPN transistor commonly used in RF amplifier and oscillator circuits.

  2. What are the key features of the 2N3859A_D75Z transistor?

    • The 2N3859A_D75Z transistor features high gain, low noise, and excellent high-frequency performance, making it suitable for RF applications.

  3. What are the typical applications of the 2N3859A_D75Z transistor?

    • Typical applications include RF amplifiers, oscillators, mixers, and other high-frequency signal processing circuits.

  4. What are the operating conditions for the 2N3859A_D75Z transistor?

    • The 2N3859A_D75Z operates under standard NPN transistor conditions with appropriate biasing and voltage levels for RF applications.

  5. What are the recommended biasing and matching circuits for the 2N3859A_D75Z transistor?

    • Biasing and matching circuits should be designed to optimize the transistor's performance at the desired frequency range, typically using lumped or distributed components.

  6. What are the thermal considerations for the 2N3859A_D75Z transistor?

    • Thermal management is important to ensure the transistor operates within its specified temperature range, especially in high-power or continuous operation scenarios.

  7. How does the 2N3859A_D75Z transistor compare to similar transistors in its class?

    • The 2N3859A_D75Z offers competitive performance in terms of gain, noise figure, and frequency response compared to other transistors in its category.

  8. What are the packaging options available for the 2N3859A_D75Z transistor?

    • The 2N3859A_D75Z is typically available in TO-39 metal can packages, providing good thermal performance and ease of mounting.

  9. Are there any special considerations for layout and grounding when using the 2N3859A_D75Z transistor?

    • Proper RF layout techniques and grounding practices should be employed to minimize parasitic effects and maintain signal integrity.

  10. Where can I find detailed application notes and reference designs for the 2N3859A_D75Z transistor?

    • Detailed application notes and reference designs can often be found in the datasheet provided by the manufacturer or through application engineering support from semiconductor suppliers.