NXP USA Inc.
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PDTA113EK,115
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PDTA113EK,115

Product Overview

  • Category: Transistor
  • Use: Amplification and switching of electronic signals
  • Characteristics: Small form factor, high gain, low power consumption
  • Package: SOT416 (SC-75)
  • Essence: NPN Resistor-Equipped Transistor (RET)
  • Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Continuous Collector Current (IC): 100mA
  • Total Power Dissipation (PTOT): 200mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  • Pin 1 (Emitter)
  • Pin 2 (Base)
  • Pin 3 (Collector)

Functional Features

  • High current gain
  • Low saturation voltage
  • Fast switching speed
  • Small package size

Advantages

  • Suitable for space-constrained applications
  • Low power consumption
  • Wide operating temperature range

Disadvantages

  • Limited maximum collector current
  • Sensitive to overvoltage conditions

Working Principles

The PDTA113EK,115 operates as a bipolar junction transistor (BJT), utilizing the flow of charge carriers to amplify or switch electronic signals. When a small current is applied to the base terminal, it controls the larger current flowing between the collector and emitter terminals.

Detailed Application Field Plans

  1. Portable electronic devices
  2. Audio amplifiers
  3. Sensor interfaces
  4. Battery-powered circuits

Detailed and Complete Alternative Models

  1. BC847B,215
  2. MMBT3904,215
  3. FMMT617,215

Note: The above information provides a comprehensive overview of the PDTA113EK,115, including its specifications, features, and application areas.

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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan PDTA113EK,115 dalam solusi teknis

  1. What is PDTA113EK,115?

    • PDTA113EK,115 is a high-performance NPN bipolar transistor in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.

  2. What are the key features of PDTA113EK,115?

    • The key features include high current gain, low collector-emitter saturation voltage, and low power dissipation.

  3. What are the typical applications of PDTA113EK,115?

    • Typical applications include high-speed switching and amplification in various technical solutions such as portable electronics, battery management systems, and sensor interfaces.

  4. What is the maximum collector current for PDTA113EK,115?

    • The maximum collector current is 100mA.

  5. What is the maximum collector-emitter voltage for PDTA113EK,115?

    • The maximum collector-emitter voltage is 50V.

  6. What is the thermal resistance of PDTA113EK,115?

    • The thermal resistance from junction to ambient is typically 625°C/W.

  7. Is PDTA113EK,115 RoHS compliant?

    • Yes, PDTA113EK,115 is RoHS compliant, making it suitable for use in environmentally sensitive applications.

  8. What are the recommended operating and storage temperatures for PDTA113EK,115?

    • The recommended operating temperature range is -55°C to +150°C, and the storage temperature range is -65°C to +150°C.

  9. Does PDTA113EK,115 require any special handling during assembly?

    • PDTA113EK,115 is designed for surface-mounted assembly and should follow standard SMD handling procedures.

  10. Are there any known reliability issues with PDTA113EK,115?

    • PDTA113EK,115 has a proven track record of reliability when used within its specified operating conditions and parameters.