MRF8S21200HSR6

Introduction

The MRF8S21200HSR6 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: RF Transistor
• Use: Power amplification in RF applications
• Characteristics: High power handling, high frequency operation, rugged design
• Package: SMD (Surface Mount Device)
• Essence: Amplifying RF signals with high efficiency and reliability
• Packaging/Quantity: Typically supplied in reels or tubes, quantity varies based on manufacturer's specifications

Specifications

• Frequency Range: 800MHz to 2200MHz
• Power Output: Up to 200W
• Voltage: VCC = 32V
• Current: ICCQ = 1500mA
• Gain: 15dB typical
• Efficiency: 60% typical
• Thermal Resistance: RθJC = 0.5°C/W

Detailed Pin Configuration

The MRF8S21200HSR6 typically features the following pin configuration: 1. Collector (C) 2. Base (B) 3. Emitter (E) 4. Ground (GND)

Functional Features

• High power gain
• Broadband performance
• Excellent linearity
• Built-in protection circuits

Advantages and Disadvantages

Advantages

• High power handling capability
• Wide frequency range coverage
• Reliable and rugged construction
• Good thermal management

Disadvantages

• Higher cost compared to lower power transistors
• Requires careful impedance matching for optimal performance

Working Principles

The MRF8S21200HSR6 operates on the principle of amplifying RF signals by controlling the flow of current through its semiconductor material. When biased and driven with an input signal, it amplifies the signal while maintaining linearity and efficiency.

Detailed Application Field Plans

The MRF8S21200HSR6 finds applications in: - High-power RF amplifiers - Broadcast transmitters - Radar systems - Wireless communication infrastructure

Detailed and Complete Alternative Models

• MRF8P29300H
• MRF7S21170HSR5
• MRF6VP41KH

In summary, the MRF8S21200HSR6 is a high-power RF transistor with broad applicability in RF power amplification. Its robust design, high power handling, and wide frequency range make it suitable for demanding RF applications.

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