BLF4G10-160,112

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of radio frequency signals - Characteristics: High power, high frequency operation - Package: SOT539A - Essence: Gallium Nitride (GaN) technology - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 400-2700 MHz - Output Power: 160W - Gain: 10dB - Efficiency: 65% - Voltage: 32V - Current: 14A - Operating Temperature: -40°C to +150°C

Detailed Pin Configuration: - Pin 1: Gate - Pin 2: Drain - Pin 3: Source - Pin 4: Not connected - Pin 5: Not connected

Functional Features: - High power density - Broadband performance - High efficiency - Excellent thermal stability

Advantages: - Compact size - High power output - Wide frequency range coverage - Enhanced thermal management

Disadvantages: - Higher cost compared to traditional transistors - Sensitive to electrostatic discharge

Working Principles: The BLF4G10-160,112 operates based on the principles of GaN technology, where the high electron mobility and wide bandgap properties of GaN are utilized to achieve high-frequency, high-power amplification.

Detailed Application Field Plans: - Cellular base stations - Radar systems - Broadcast transmitters - Satellite communication systems

Detailed and Complete Alternative Models: - BLF888A - BLF578XR - BLF2425M6L

This comprehensive entry provides an in-depth understanding of the BLF4G10-160,112, covering its category, use, characteristics, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.