BC856BT,115

Product Overview

• Category: Transistor
• Use: Amplification and switching in electronic circuits
• Characteristics: Small signal NPN transistor, low power, high voltage, high current gain
• Package: SOT-23
• Essence: Silicon epitaxial planar NPN transistor
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Collector-Emitter Voltage (VCEO): 45 V
• Collector-Base Voltage (VCBO): 80 V
• Emitter-Base Voltage (VEBO): 6 V
• Collector Current (IC): 100 mA
• Power Dissipation (PD): 250 mW
• Transition Frequency (fT): 150 MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

1. Emitter (E)
2. Base (B)
3. Collector (C)

Functional Features

• High current gain
• Low noise
• High voltage capability
• Fast switching speed

Advantages and Disadvantages

• Advantages:
  • Small size
  • Versatile for various applications
  • Reliable performance
• Disadvantages:
  • Limited power dissipation capability
  • Sensitivity to overvoltage conditions

Working Principles

The BC856BT,115 operates as a small signal NPN transistor, amplifying and switching electronic signals. When biased correctly, it allows for control of larger currents and voltages by smaller input signals.

Detailed Application Field Plans

1. Audio amplification circuits
2. Signal amplification in sensor interfaces
3. Switching applications in logic circuits
4. Oscillator circuits

Detailed and Complete Alternative Models

• BC846BT,115
• BC847BT,115
• BC850BT,115

This comprehensive entry provides an in-depth understanding of the BC856BT,115 transistor, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.