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PDTA113ZT,215
Product Overview
Category
PDTA113ZT,215 belongs to the category of small signal transistors.
Use
It is commonly used for amplification and switching applications in electronic circuits.
Characteristics
- Small size
- Low power consumption
- High gain
- Fast switching speed
Package
PDTA113ZT,215 is typically available in a SOT-23 package.
Essence
The essence of PDTA113ZT,215 lies in its ability to provide reliable amplification and switching functions in compact electronic devices.
Packaging/Quantity
It is usually packaged in reels with a quantity of 3000 units per reel.
Specifications
- Collector-Base Voltage (VCBO): 50V
- Collector-Emitter Voltage (VCEO): 50V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 100mA
- Total Power Dissipation: 250mW
- Transition Frequency (fT): 250MHz
Detailed Pin Configuration
PDTA113ZT,215 has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)
Functional Features
- High voltage capability
- Low collector-emitter saturation voltage
- Complementary NPN type available (PDTA123YT,215)
Advantages
- Small form factor
- Suitable for low-power applications
- Fast response time
Disadvantages
- Limited maximum collector current
- Lower power dissipation compared to larger transistors
Working Principles
PDTA113ZT,215 operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current.
Detailed Application Field Plans
PDTA113ZT,215 is widely used in various electronic devices such as: - Audio amplifiers - Signal processing circuits - Switching circuits
Detailed and Complete Alternative Models
Some alternative models to PDTA113ZT,215 include: - PDTA123YT,215 (Complementary NPN type) - PDTA143ZT,215 (Higher current rating) - PDTA153ZT,215 (Higher voltage rating)
In conclusion, PDTA113ZT,215 is a versatile small signal transistor that finds application in numerous electronic circuits due to its compact size, low power consumption, and reliable performance.
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Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan PDTA113ZT,215 dalam solusi teknis
What is PDTA113ZT,215?
- PDTA113ZT,215 is a high-performance NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.
What are the key features of PDTA113ZT,215?
- The key features of PDTA113ZT,215 include high current gain, low saturation voltage, and high transition frequency, making it suitable for various technical solutions.
What are the typical applications of PDTA113ZT,215?
- PDTA113ZT,215 is commonly used in audio amplification, signal processing, sensor interfaces, and general-purpose switching circuits.
What is the maximum collector current rating of PDTA113ZT,215?
- The maximum collector current rating of PDTA113ZT,215 is 100mA, making it suitable for low-power applications.
What is the maximum power dissipation of PDTA113ZT,215?
- The maximum power dissipation of PDTA113ZT,215 is 250mW, allowing it to handle moderate power levels.
What is the typical voltage gain of PDTA113ZT,215?
- The typical voltage gain of PDTA113ZT,215 is around 100, making it suitable for amplification purposes.
Does PDTA113ZT,215 require external biasing components?
- Yes, PDTA113ZT,215 requires external biasing components such as resistors and capacitors for proper operation in amplifier circuits.
Is PDTA113ZT,215 suitable for high-frequency applications?
- Yes, PDTA113ZT,215 has a high transition frequency, making it suitable for moderate high-frequency applications.
What are the recommended operating conditions for PDTA113ZT,215?
- The recommended operating conditions for PDTA113ZT,215 include a collector-emitter voltage (VCE) of 50V and a collector current (IC) of 100mA.
Are there any specific thermal considerations for using PDTA113ZT,215?
- It is important to consider proper heat sinking or thermal management for PDTA113ZT,215 to ensure reliable performance, especially in high-power applications.