BUK9Y14-80E,115

Product Overview

Category

The BUK9Y14-80E,115 belongs to the category of power MOSFETs.

Use

It is used for switching and amplifying electronic signals in various applications.

Characteristics

• High voltage capability
• Low on-resistance
• Fast switching speed
• Low gate charge

Package

The BUK9Y14-80E,115 is typically available in a TO-220AB package.

Essence

This product is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on supplier specifications.

Specifications

• Drain-Source Voltage (VDS): 80V
• Continuous Drain Current (ID): 60A
• On-Resistance (RDS(on)): 8.5mΩ
• Power Dissipation (PD): 200W
• Gate-Source Voltage (VGS): ±20V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The BUK9Y14-80E,115 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

• High voltage capability allows for use in various power applications.
• Low on-resistance minimizes power loss and improves efficiency.
• Fast switching speed enables rapid response in switching applications.

Advantages

• Suitable for high-power applications
• Low power dissipation
• Wide operating temperature range

Disadvantages

• May require careful handling due to its high voltage capability
• Sensitive to electrostatic discharge (ESD)

Working Principles

The BUK9Y14-80E,115 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

This power MOSFET is commonly used in: - Switching power supplies - Motor control - LED lighting - Battery management systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the BUK9Y14-80E,115 include: - IRF540N - FDP8870 - STP60NF06L

In conclusion, the BUK9Y14-80E,115 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power applications. Its advantages include suitability for high-power applications and low power dissipation, while potential disadvantages include sensitivity to ESD and the need for careful handling due to its high voltage capability.

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