PC28F128P33B85B TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Non-volatile memory for long-term data storage
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 128 megabytes (MB)
• Interface: Parallel
• Operating Voltage: 2.7V - 3.6V
• Access Time: 85 nanoseconds (ns)
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles
• Data Retention: Up to 20 years

Pin Configuration (Detailed)

The PC28F128P33B85B TR flash memory module has a total of 48 pins. The pin configuration is as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RP# (Ready/Busy)
8. RY/BY# (Ready/Busy Output)
9. RESET# (Reset Input)
10. WP#/ACC (Write Protect/Acceleration)
11. VSS (Ground)

Note: The remaining pins are not listed here for brevity.

Functional Features

• High-speed read and write operations
• Efficient power management
• Error correction capabilities
• Block erase and sector erase functions
• Hardware and software protection mechanisms
• Advanced wear-leveling algorithms

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Non-volatile memory retains data even without power - Reliable and durable - Suitable for a wide range of electronic devices

Disadvantages: - Limited endurance (100,000 program/erase cycles) - Relatively high cost compared to other storage options - Requires specialized programming equipment for initial setup

Working Principles

The PC28F128P33B85B TR flash memory operates based on the principles of floating-gate transistors. It uses electrically erasable programmable read-only memory (EEPROM) technology to store and retrieve digital data. The memory cells consist of floating-gate MOSFETs that can trap or release electrons, representing binary states (0 or 1). When data is written, electrons are trapped in the floating gate, and when data is erased, the electrons are removed.

Detailed Application Field Plans

The PC28F128P33B85B TR flash memory module finds applications in various electronic devices, including but not limited to:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Automotive electronics
6. Industrial control systems
7. Embedded systems
8. Networking equipment

Alternative Models (Detailed and Complete)

1. PC28F128P33B85 TR
   • Similar specifications and features as PC28F128P33B85B TR, but with different packaging options.
2. PC28F128P33B85A TR
   • Similar specifications and features as PC28F128P33B85B TR, but with different operating temperature range (-40°C to +105°C).
3. PC28F128P33B85C TR
   • Similar specifications and features as PC28F128P33B85B TR, but with higher endurance (500,000 program/erase cycles).

These alternative models provide customers with options based on their specific requirements and operating conditions.

In conclusion, the PC28F128P33B85B TR flash memory module is a high-capacity, non-volatile storage solution used in various electronic devices. Its fast read/write speeds, reliability, and durability make it suitable for a wide range of applications. While it has limitations such as limited endurance and higher cost, alternative models offer variations to meet different needs.