NAND512W3A2DN6E

Product Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile memory storage
• Characteristics:
  • High-density storage
  • Fast read and write speeds
  • Low power consumption
  • Reliable data retention
• Package: DFN-8 (Dual Flat No-leads)
• Essence: NAND Flash Memory
• Packaging/Quantity: Available in reels of 3000 units

Specifications

• Memory Capacity: 512 Megabits (64 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The NAND512W3A2DN6E IC has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. /CS: Chip select input
4. SCK: Serial clock input
5. SI: Serial data input
6. SO: Serial data output
7. WP: Write protect input
8. HOLD: Hold input

Functional Features

• Page Program Operation: Allows data to be written in page increments
• Block Erase Operation: Enables erasing of data in block increments
• Random Access: Supports random access to any memory location
• Auto Page Rewrite: Facilitates rewriting of individual pages without erasing the entire block
• Error Correction Code (ECC): Provides data integrity by detecting and correcting errors

Advantages and Disadvantages

Advantages: - High storage density allows for more data to be stored in a compact form factor - Fast read and write speeds enable quick data transfer - Low power consumption results in energy-efficient operation - Reliable data retention ensures long-term storage of information

Disadvantages: - Limited endurance compared to other non-volatile memory technologies - Higher cost per unit compared to traditional hard drives or solid-state drives

Working Principles

The NAND512W3A2DN6E is based on NAND flash memory technology. It utilizes a series of floating-gate transistors to store data. The memory cells are organized into blocks, which can be individually erased or programmed. When writing data, the existing charge in the memory cell is removed, and new charge is applied to represent the desired data. Reading data involves detecting the presence or absence of charge in the memory cells.

Detailed Application Field Plans

The NAND512W3A2DN6E IC finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Digital cameras - Mobile phones - Tablets

Detailed and Complete Alternative Models

1. NAND256W3A2DN6E: 256 Megabit (32 Megabyte) capacity, same package and interface as NAND512W3A2DN6E.
2. NAND1G0A2DN6E: 1 Gigabit (128 Megabyte) capacity, same package and interface as NAND512W3A2DN6E.
3. NAND2G0A2DN6E: 2 Gigabit (256 Megabyte) capacity, same package and interface as NAND512W3A2DN6E.
4. NAND4G0A2DN6E: 4 Gigabit (512 Megabyte) capacity, same package and interface as NAND512W3A2DN6E.

(Note: The above alternative models are for illustrative purposes only and may not reflect the actual availability in the market.)

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