N25Q064A13ESEDFF TR

Product Overview

• Category: Non-volatile Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: High-speed, low-power, reliable, and durable
• Package: Surface mount package
• Essence: Flash memory chip
• Packaging/Quantity: Tape and reel packaging, quantity varies

Specifications

• Memory Capacity: 64 Megabits (8 Megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 108 MHz
• Write Protection: Software and hardware write protection options
• Erase Time: Sector erase time of 150ms, block erase time of 400ms

Detailed Pin Configuration

The N25Q064A13ESEDFF TR has a total of 8 pins:

1. Chip Select (/CS) - Active low input for selecting the device
2. Serial Clock (SCLK) - Input for synchronizing data transfer
3. Serial Data Input (SI) - Input for shifting data into the device
4. Serial Data Output (SO) - Output for shifting data out of the device
5. Write Protect (/WP) - Input for enabling or disabling write protection
6. Hold (/HOLD) - Input for pausing ongoing operations
7. Ground (GND) - Reference ground connection
8. Power Supply (VCC) - Power supply input

Functional Features

• High-speed data transfer with SPI interface
• Low power consumption for energy-efficient operation
• Reliable and durable flash memory technology
• Software and hardware write protection options for data security
• Easy integration into various electronic devices

Advantages and Disadvantages

Advantages

• High-speed data transfer rate improves overall system performance
• Low power consumption extends battery life in portable devices
• Reliable flash memory technology ensures data integrity
• Write protection options enhance data security

Disadvantages

• Limited storage capacity compared to other memory technologies
• Erase time for larger blocks can be relatively long

Working Principles

The N25Q064A13ESEDFF TR is based on the Serial Peripheral Interface (SPI) protocol. It utilizes a combination of floating gate and tunnel oxide technology to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the threshold voltage of the memory cell. This change in threshold voltage allows the stored data to be read back accurately. The SPI interface facilitates communication between the device and the host controller, enabling seamless data transfer.

Detailed Application Field Plans

The N25Q064A13ESEDFF TR is widely used in various electronic devices that require non-volatile memory for data storage and retrieval. Some common application fields include:

1. Consumer Electronics: Smartphones, tablets, digital cameras, and gaming consoles.
2. Automotive: Infotainment systems, instrument clusters, and advanced driver-assistance systems (ADAS).
3. Industrial Automation: Programmable logic controllers (PLCs), human-machine interfaces (HMIs), and industrial control systems.
4. Networking Equipment: Routers, switches, and network attached storage (NAS) devices.
5. Medical Devices: Patient monitoring systems, medical imaging equipment, and diagnostic devices.

Detailed and Complete Alternative Models

1. N25Q032A13ESE40F TR - 32 Megabit (4 Megabyte) capacity, similar specifications.
2. N25Q128A13ESE40F TR - 128 Megabit (16 Megabyte) capacity, higher storage capacity.
3. N25Q256A13ESE40F TR - 256 Megabit (32 Megabyte) capacity, higher storage capacity.

These alternative models offer different memory capacities to suit specific application requirements while maintaining similar specifications and compatibility with the SPI interface.

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