Micron Technology Inc.
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MT47H64M16HR-3 L:H TR
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MT47H64M16HR-3 L:H TR

Product Overview

Category

The MT47H64M16HR-3 L:H TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for data storage and retrieval purposes.

Characteristics

  • High-speed operation: The MT47H64M16HR-3 L:H TR offers fast data transfer rates, enabling efficient processing of large amounts of information.
  • Large capacity: With a capacity of 64 megabits (8 megabytes), this DRAM chip can store a significant amount of data.
  • Low power consumption: The chip is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: The MT47H64M16HR-3 L:H TR is available in a small form factor package, allowing for space-efficient integration into electronic devices.
  • RoHS compliant: This product adheres to the Restriction of Hazardous Substances directive, ensuring its environmental friendliness.

Packaging/Quantity

The MT47H64M16HR-3 L:H TR is typically packaged in tape and reel format, which facilitates automated assembly processes. It is commonly available in quantities of 1000 units per reel.

Specifications

  • Memory Type: DDR3 SDRAM
  • Organization: 64M words x 16 bits
  • Operating Voltage: 1.5V
  • Clock Frequency: Up to 800 MHz
  • Data Rate: Up to 1600 Mbps
  • Refresh Mode: Auto-refresh and self-refresh
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: 96-ball FBGA

Detailed Pin Configuration

The MT47H64M16HR-3 L:H TR features a 96-ball fine-pitch ball grid array (FBGA) package. The pin configuration is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CK
  44. CKE
  45. CS#
  46. DM0
  47. DM1
  48. VSS
  49. DQS0
  50. DQS#0
  51. VREF
  52. VSS
  53. DQS1
  54. DQS#1
  55. VSS
  56. DQSN0
  57. DQSN1
  58. VSS
  59. DQSN2
  60. DQSN3
  61. VSS
  62. DQSN4
  63. DQSN5
  64. VSS

Functional Features

  • High-speed data transfer: The MT47H64M16HR-3 L:H TR supports fast data transfer rates, enabling efficient communication between the memory chip and the device's processor.
  • Auto-refresh and self-refresh modes: This DRAM chip automatically refreshes stored data to maintain its integrity and reliability.
  • Low power consumption: The product is designed to minimize power usage, making it suitable for energy-efficient devices.
  • Error correction: The MT47H64M16HR-3 L:H TR incorporates error correction techniques to detect and correct data errors, ensuring data accuracy.

Advantages and Disadvantages

Advantages

  • High-speed operation allows for quick data access and processing.
  • Large capacity enables storage of significant amounts of data.
  • Low power consumption prolongs battery life in portable devices.
  • Compact package facilitates space-efficient integration into electronic devices.
  • RoHS compliance ensures environmental friendliness.

Disadvantages

  • Limited compatibility: The MT47H64M16HR-3 L:H TR is specifically designed for DDR3 SDRAM applications and may not be compatible with older or newer memory standards.
  • Relatively high cost: Compared to other memory options, DDR3 SDRAM chips can be more

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT47H64M16HR-3 L:H TR dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of MT47H64M16HR-3 L:H TR in technical solutions:

  1. Question: What is the capacity of the MT47H64M16HR-3 L:H TR memory module?
    Answer: The MT47H64M16HR-3 L:H TR has a capacity of 64 megabytes (MB).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT47H64M16HR-3 L:H TR is typically 1.7V to 1.95V.

  3. Question: What is the clock frequency supported by this memory module?
    Answer: The MT47H64M16HR-3 L:H TR supports a clock frequency of up to 400 MHz.

  4. Question: Is this memory module compatible with DDR3 technology?
    Answer: Yes, the MT47H64M16HR-3 L:H TR is a DDR3 SDRAM memory module.

  5. Question: Can I use this memory module in a laptop or desktop computer?
    Answer: Yes, the MT47H64M16HR-3 L:H TR can be used in both laptops and desktop computers that support DDR3 memory.

  6. Question: What is the data transfer rate of this memory module?
    Answer: The MT47H64M16HR-3 L:H TR has a maximum data transfer rate of 800 megabits per second (Mbps).

  7. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the MT47H64M16HR-3 L:H TR does not support ECC.

  8. Question: Can I use multiple MT47H64M16HR-3 L:H TR memory modules together?
    Answer: Yes, you can use multiple modules to increase the total memory capacity of your system.

  9. Question: What is the form factor of this memory module?
    Answer: The MT47H64M16HR-3 L:H TR has a small outline dual in-line memory module (SO-DIMM) form factor.

  10. Question: Is this memory module suitable for high-performance applications?
    Answer: Yes, the MT47H64M16HR-3 L:H TR is designed for high-performance computing and can be used in various technical solutions requiring fast and reliable memory access.

Please note that these answers are based on general information about the MT47H64M16HR-3 L:H TR memory module. For specific technical requirements and compatibility, it is always recommended to refer to the manufacturer's documentation or consult with a technical expert.