MT47H512M4THN-3:E TR

Product Overview

Category

MT47H512M4THN-3:E TR belongs to the category of semiconductor memory products.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed performance
• Large storage capacity
• Low power consumption
• Reliable data retention
• Compact package size

Package

MT47H512M4THN-3:E TR is available in a small form factor package, which makes it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

MT47H512M4THN-3:E TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of memory chips.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Capacity: 512 Megabits (64 Megabytes)
• Organization: 4 banks of 8 Meg x 4 bits
• Speed: 3 nanoseconds (ns) cycle time
• Voltage: 1.8 volts (V)
• Interface: Double Data Rate (DDR) interface

Detailed Pin Configuration

The pin configuration of MT47H512M4THN-3:E TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. A0
20. A1
21. A2
22. A3
23. A4
24. A5
25. A6
26. A7
27. A8
28. A9
29. A10
30. A11
31. A12
32. A13
33. A14
34. A15
35. BA0
36. BA1
37. RAS#
38. CAS#
39. WE#
40. CK

Functional Features

• Burst mode operation for efficient data transfer
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable read and write latency settings
• Internal pipelined architecture for high-speed operation

Advantages and Disadvantages

Advantages

• High-speed performance enables faster data access
• Large storage capacity accommodates extensive data requirements
• Low power consumption prolongs battery life in portable devices
• Reliable data retention ensures data integrity over time
• Compact package size allows for integration in various electronic devices

Disadvantages

• Relatively higher cost compared to other memory technologies
• Limited scalability beyond a certain capacity
• Susceptible to data loss in case of power failure without proper backup measures

Working Principles

MT47H512M4THN-3:E TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The data is accessed by sending commands and addresses through the interface, and the stored information is retrieved by reading the charge levels of the capacitors.

Detailed Application Field Plans

MT47H512M4THN-3:E TR finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Laptops and notebooks - Servers and data centers - Mobile phones and tablets - Gaming consoles - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT47H512M4THN-3:E TR that offer similar functionality and specifications include: - MT47H256M8EB-25E:G - MT47H128M16RT-25E:B - MT47H64M16HR-25E:A

These alternative models can be considered based on specific requirements and compatibility with the target application.

In conclusion, MT47H512M4THN-3:E TR is a high-performance semiconductor memory product primarily used for data storage in electronic devices. It offers fast access times, large storage capacity, and low power consumption. While it has advantages such as reliability and compact size, it also has limitations like higher cost and limited scalability. Its working principle is based on synchronous dynamic random access memory technology. It finds applications in various fields and has alternative models available for