MT47H512M4EB-187E:C

Product Overview

Category

MT47H512M4EB-187E:C belongs to the category of semiconductor memory products.

Use

It is primarily used as a high-density synchronous dynamic random-access memory (SDRAM) module.

Characteristics

• High density: The MT47H512M4EB-187E:C offers a large storage capacity, allowing for efficient data storage and retrieval.
• Synchronous operation: It operates synchronously with the system clock, enabling faster data transfer rates.
• Low power consumption: This product is designed to consume minimal power, making it suitable for energy-efficient applications.
• High-speed performance: The MT47H512M4EB-187E:C provides fast access times, ensuring quick data processing.

Package

The MT47H512M4EB-187E:C comes in a compact and standardized package, which facilitates easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide high-density and high-speed memory storage, essential for modern computing systems.

Packaging/Quantity

The MT47H512M4EB-187E:C is typically packaged in trays or reels, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in multiples of 100 units.

Specifications

• Memory Type: SDRAM
• Organization: 512 Megabit x 4
• Data Rate: 187 MHz
• Voltage Supply: 2.5V
• Interface: Double Data Rate (DDR)
• Operating Temperature Range: -40°C to +85°C
• Package Type: FBGA (Fine-Pitch Ball Grid Array)

Detailed Pin Configuration

The MT47H512M4EB-187E:C has a specific pin configuration that enables proper connectivity and functionality within a system. The detailed pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. VSS
19. VDD
20. VSS
21. A0
22. A1
23. A2
24. A3
25. A4
26. A5
27. A6
28. A7
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. BA0
38. BA1
39. RAS#
40. CAS#
41. WE#
42. CS#
43. CKE
44. CLK
45. DQS0
46. DQS1
47. DM0
48. DM1
49. VSS
50. VDD

Functional Features

The MT47H512M4EB-187E:C offers the following functional features:

1. Burst Mode: It supports burst mode operations, allowing for efficient data transfer.
2. Auto Precharge: The module automatically precharges the memory cells after a read or write operation, optimizing performance.
3. On-Die Termination (ODT): ODT helps in reducing signal reflections and improving signal integrity.
4. Programmable CAS Latency: The CAS latency can be programmed to meet specific system requirements.
5. Self-Refresh Mode: The module can enter a self-refresh mode to conserve power when not in use.

Advantages and Disadvantages

Advantages

• High-density storage capacity
• Fast data transfer rates
• Low power consumption
• Standardized package for easy integration

Disadvantages

• Limited compatibility with older systems that do not support DDR interfaces
• Relatively higher cost compared to lower-capacity memory modules

Working Principles

The MT47H512M4EB-187E:C operates based on the principles of synchronous dynamic random-access memory (SDRAM). It synchronizes its operations with the system clock, allowing for efficient data transfer between the memory module and the processor. The memory cells store data in a digital format using capacitors, which are periodically refreshed to maintain data integrity.

Detailed Application Field Plans

The MT47H512M4EB-187E:C finds applications in various fields, including:

1. Computer Systems: It is used in desktop computers, laptops, and servers to provide high-speed and high-capacity memory for efficient data processing.
2. Networking Equipment: The module is utilized in routers, switches, and network appliances