MT46V64M8TG-75:D

Product Overview

Category

The MT46V64M8TG-75:D belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage: The MT46V64M8TG-75:D offers a capacity of 64 megabits (8 megabytes), allowing for efficient data storage.
• Fast data access: With a speed rating of 75 nanoseconds, this DRAM chip enables quick retrieval of stored information.
• Low power consumption: The MT46V64M8TG-75:D is designed to operate efficiently with minimal power requirements.
• Wide temperature range: This chip can function reliably within a temperature range of -40°C to +85°C, making it suitable for various environments.

Package and Quantity

The MT46V64M8TG-75:D is available in a small-outline integrated circuit (SOIC) package. It is typically sold in reels containing multiple units.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 64 Megabits x 8 bits
• Supply Voltage: 3.3 Volts
• Speed Rating: 75 Nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Package Type: Small Outline Integrated Circuit (SOIC)

Detailed Pin Configuration

The MT46V64M8TG-75:D features a total of 54 pins, each serving a specific purpose. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. NC
12. A0
13. A1
14. A2
15. A3
16. A4
17. A5
18. A6
19. A7
20. A8
21. A9
22. A10
23. A11
24. A12
25. A13
26. A14
27. A15
28. A16
29. A17
30. A18
31. A19
32. A20
33. A21
34. A22
35. A23
36. A24
37. A25
38. A26
39. A27
40. A28
41. A29
42. A30
43. A31
44. WE#
45. CAS#
46. RAS#
47. CKE
48. CS#
49. BA0
50. BA1
51. CLK
52. DQM0
53. DQM1
54. VSS

Functional Features

The MT46V64M8TG-75:D offers the following functional features:

• Random Access: Allows for the retrieval of data from any memory location without the need for sequential access.
• Refresh Capability: The chip automatically refreshes stored data to prevent loss or corruption.
• Burst Mode: Supports burst read and write operations, enabling faster data transfer rates.
• Low Power Standby: Enters a low-power standby mode when not actively accessed, conserving energy.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data access speed
• Low power consumption
• Wide temperature range compatibility

Disadvantages

• Relatively higher cost compared to other memory technologies
• Requires periodic refreshing to maintain data integrity

Working Principles

The MT46V64M8TG-75:D operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which must be periodically refreshed to maintain their charge. When a specific memory location is accessed, the corresponding row and column addresses are provided, allowing the data to be read or written.

Detailed Application Field Plans

The MT46V64M8TG-75:D finds extensive use in various applications, including:

1. Personal Computers: Used as main memory for desktops and laptops.
2. Servers: Provides high-speed data storage for server systems.
3. Networking Equipment: Enables efficient data buffering and caching in routers and switches.
4. Consumer Electronics: Used in gaming consoles, set-top boxes, and other multimedia devices.
5. Automotive Systems: Supports data storage and retrieval in automotive infotainment systems.

Detailed and Complete Alternative Models

1. MT46V64M8TG-6T: Similar to the MT46V64M8TG-75:D but with a faster speed rating of 6 nanoseconds.
2. MT