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MT46V32M16BN-6:C

MT46V32M16BN-6:C

Product Overview

Category

MT46V32M16BN-6:C belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

  • High-density storage capacity
  • Fast data access and transfer rates
  • Low power consumption
  • Compact package size
  • Wide operating temperature range

Package

MT46V32M16BN-6:C is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage and retrieval capabilities for various electronic devices.

Packaging/Quantity

MT46V32M16BN-6:C is typically packaged in trays or reels, with each containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

  • Memory Type: DDR3 SDRAM
  • Organization: 32M words x 16 bits
  • Operating Voltage: 1.5V
  • Speed Grade: 6
  • Refresh Rate: 8K cycles/64ms
  • Operating Temperature Range: -40°C to +85°C
  • Pin Count: 60 pins

Detailed Pin Configuration

The pin configuration of MT46V32M16BN-6:C is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSS
  19. NC
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. A16
  37. A17
  38. A18
  39. A19
  40. A20
  41. BA0
  42. BA1
  43. RAS#
  44. CAS#
  45. WE#
  46. CK
  47. CKE
  48. CS#
  49. DM0
  50. DM1
  51. VSS
  52. VDD
  53. VREF
  54. VSS
  55. ODT
  56. VSS
  57. DQS0#
  58. DQS0
  59. DQS1#
  60. DQS1

Functional Features

  • High-speed data access and transfer capabilities
  • Support for burst mode operations
  • On-die termination (ODT) for improved signal integrity
  • Auto-refresh and self-refresh modes for power-saving operation
  • Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

  • High-density storage capacity allows for larger data storage requirements.
  • Fast data access and transfer rates enable efficient processing of large datasets.
  • Low power consumption helps to prolong battery life in mobile devices.
  • Compact package size facilitates integration into space-constrained electronic devices.
  • Wide operating temperature range ensures reliable performance in various environments.

Disadvantages

  • Relatively higher cost compared to other types of memory technologies.
  • Limited scalability in terms of maximum storage capacity compared to other memory types.

Working Principles

MT46V32M16BN-6:C operates based on the principles of dynamic random access memory. It stores data in a matrix of capacitors, with each capacitor representing a single bit of information. The stored data needs to be periodically refreshed to maintain its integrity. When data is requested, the memory controller activates the appropriate row and column addresses to read or write the desired data.

Detailed Application Field Plans

MT46V32M16BN-6:C finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Mobile phones and tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT46V32M16BN-6:C include: - Samsung K4B2G1646E-BCK0 - Micron MT41K256M16TW-107:P - Hynix H5TC4G63AFR-PBA

These alternative models provide comparable specifications

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT46V32M16BN-6:C dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of MT46V32M16BN-6C in technical solutions:

  1. Question: What is MT46V32M16BN-6C?
    - Answer: MT46V32M16BN-6C is a specific model of DDR3 SDRAM (Double Data Rate 3 Synchronous Dynamic Random Access Memory) chip.

  2. Question: What is the capacity of MT46V32M16BN-6C?
    - Answer: The capacity of MT46V32M16BN-6C is 512 Megabits (Mb), which is equivalent to 64 Megabytes (MB).

  3. Question: What is the operating voltage range for MT46V32M16BN-6C?
    - Answer: The operating voltage range for MT46V32M16BN-6C is 1.425V to 1.575V.

  4. Question: What is the clock frequency supported by MT46V32M16BN-6C?
    - Answer: MT46V32M16BN-6C supports a clock frequency of up to 667 MHz.

  5. Question: What is the data transfer rate of MT46V32M16BN-6C?
    - Answer: The data transfer rate of MT46V32M16BN-6C is 1333 Megabits per second (Mbps).

  6. Question: Can MT46V32M16BN-6C be used in mobile devices?
    - Answer: Yes, MT46V32M16BN-6C can be used in various mobile devices such as smartphones, tablets, and portable gaming consoles.

  7. Question: Is MT46V32M16BN-6C compatible with different memory controllers?
    - Answer: Yes, MT46V32M16BN-6C is compatible with a wide range of memory controllers that support DDR3 SDRAM.

  8. Question: What are the typical applications of MT46V32M16BN-6C?
    - Answer: MT46V32M16BN-6C is commonly used in applications such as computer systems, networking equipment, industrial automation, and embedded systems.

  9. Question: Can MT46V32M16BN-6C be used for data storage?
    - Answer: No, MT46V32M16BN-6C is a volatile memory chip and is not suitable for long-term data storage. It is primarily used for temporary data storage during system operation.

  10. Question: Are there any specific temperature requirements for MT46V32M16BN-6C?
    - Answer: Yes, MT46V32M16BN-6C has an operating temperature range of -40°C to +85°C, making it suitable for various environmental conditions.

Please note that these answers are general and may vary depending on the specific application and requirements.