MT46V16M8TG-75:D TR

Product Overview

Category

The MT46V16M8TG-75:D TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Compatible with various electronic devices

Package

The MT46V16M8TG-75:D TR is typically packaged in a small form factor integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

The MT46V16M8TG-75:D TR is commonly available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Part Number: MT46V16M8TG-75:D TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 16 Meg x 8
• Speed: 75 nanoseconds (ns)
• Voltage: 3.3 volts (V)
• Operating Temperature Range: -40°C to +85°C
• Package Type: Small Outline Integrated Circuit (SOIC)

Detailed Pin Configuration

The MT46V16M8TG-75:D TR has a total of 54 pins, which are arranged as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. WE#
37. CAS#
38. RAS#
39. CKE
40. CS#
41. BA0
42. BA1
43. VDD
44. VDD
45. VSS
46. VSS
47. VSS
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS

Functional Features

• High-speed data access and transfer
• Low power consumption
• Self-refresh capability for power-saving mode
• Auto precharge function for improved performance
• Burst mode operation for efficient data transfer

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Compatible with various electronic devices
• Low power consumption

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher cost compared to other memory technologies

Working Principles

The MT46V16M8TG-75:D TR operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within each memory cell, which are organized in a matrix. To read or write data, the memory controller sends appropriate signals to the specific row and column addresses, allowing the data to be accessed or modified.

Detailed Application Field Plans

The MT46V16M8TG-75:D TR is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to the MT46V16M8TG-75:D TR include: - MT46V16M16P-6T IT: 16 Meg x 16 DRAM chip with a speed of 6 nanoseconds - MT47H64M16HR-25E: 64 Meg x 16 DDR3 SDRAM chip with a speed of 25 nanoseconds - MT48LC32M16A2P-75C: 32 Meg x 16 SDRAM chip with a speed of 75 nanoseconds

These alternative models offer similar functionality and can be used as replacements depending on specific requirements and compatibility with the target device.

In conclusion, the MT46V16M8TG-75:D TR is a dynamic random