MT46V16M16TG-5G:F TR

Product Overview

Category

MT46V16M16TG-5G:F TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used for storing and retrieving digital information in various electronic devices such as computers, smartphones, tablets, and gaming consoles.

Characteristics

• High-speed data access: The MT46V16M16TG-5G:F TR offers fast read and write operations, allowing for efficient data processing.
• Large storage capacity: With a capacity of 16 megabits (16M), this DRAM module can store a significant amount of data.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Wide temperature range: It operates reliably across a wide temperature range, ensuring its usability in various environments.

Package and Quantity

The MT46V16M16TG-5G:F TR is available in a small form factor package, commonly known as a Thin Small Outline Package (TSOP). It is typically sold in reels or trays containing multiple units.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Organization: 16M words x 16 bits
• Operating Voltage: 2.5V ± 0.2V
• Clock Frequency: 200 MHz
• Access Time: 5 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Pin Configuration

The detailed pin configuration of the MT46V16M16TG-5G:F TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VDD
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. /CAS
37. /RAS
38. /WE
39. /CS
40. VSS

Functional Features

• Burst Mode: The MT46V16M16TG-5G:F TR supports burst mode operations, allowing for efficient data transfer.
• Auto Refresh: It automatically performs periodic refresh cycles to maintain data integrity.
• Self-Timed Write Cycle: The product incorporates a self-timed write cycle, simplifying the memory access process.

Advantages and Disadvantages

Advantages: - High-speed data access enables faster processing. - Large storage capacity accommodates extensive data requirements. - Low power consumption prolongs battery life in portable devices. - Wide temperature range ensures reliability in various environments.

Disadvantages: - Limited compatibility with certain older systems due to its parallel interface. - Relatively higher cost compared to other memory technologies.

Working Principles

The MT46V16M16TG-5G:F TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the host device. When a read or write operation is initiated, the memory controller sends the appropriate commands and addresses to access the desired data stored in the memory cells.

Detailed Application Field Plans

The MT46V16M16TG-5G:F TR finds applications in a wide range of electronic devices, including: 1. Personal computers and laptops 2. Mobile phones and tablets 3. Gaming consoles 4. Networking equipment 5. Industrial automation systems

Alternative Models

For those seeking alternative models with similar specifications and features, the following options are available: 1. MT46V16M16P-6T IT:F 2. MT46V16M16P-5B IT:J 3. MT46V16M16P-5B IT:K 4. MT46V16M16P-5B IT:L 5. MT46V16M16P-5B IT:M

These alternative models offer comparable performance and compatibility, providing flexibility for different design requirements.

In conclusion, the MT46V16M16TG-5G:F TR is a high-speed, large-capacity DRAM module suitable for various electronic devices. Its efficient data access, low