The MT41K512M8RH-125 M:E belongs to the category of dynamic random access memory (DRAM) modules.
This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.
The MT41K512M8RH-125 M:E is packaged in a small outline dual in-line memory module (SODIMM) form factor. This compact design allows for easy installation in space-constrained devices.
The essence of this product lies in its ability to provide high-speed and reliable data storage, essential for efficient operation of modern electronic devices.
Each package of the MT41K512M8RH-125 M:E contains a single memory module.
The MT41K512M8RH-125 M:E follows the standard pin configuration for DDR3 SDRAM modules. It consists of a total of 204 pins, arranged in a specific pattern to facilitate proper connection with the host device.
For a detailed pin configuration diagram, please refer to the product datasheet.
The MT41K512M8RH-125 M:E operates based on the principles of DDR3 SDRAM technology. It stores data in a matrix of capacitors, which are charged or discharged to represent binary values. The memory controller sends commands to access specific memory locations and retrieve or store data accordingly.
The MT41K512M8RH-125 M:E finds extensive use in various applications, including: 1. Personal computers and laptops 2. Servers and data centers 3. Gaming consoles 4. Networking equipment 5. Industrial automation systems
Its high-speed and reliable performance make it suitable for demanding tasks such as gaming, multimedia processing, and data-intensive applications.
These alternative models offer different capacities, clock frequencies, and features to cater to diverse system requirements.
Note: The content provided above is for illustrative purposes only and may not reflect actual product specifications. Please refer to the manufacturer's documentation for accurate information.
Sure! Here are 10 common questions and answers related to the application of MT41K512M8RH-125 M:E in technical solutions:
Q: What is the capacity of the MT41K512M8RH-125 M:E memory module? A: The MT41K512M8RH-125 M:E has a capacity of 512 Megabits (64 Megabytes).
Q: What is the operating voltage range for this memory module? A: The operating voltage range for the MT41K512M8RH-125 M:E is 1.35V to 1.5V.
Q: What is the maximum clock frequency supported by this memory module? A: The MT41K512M8RH-125 M:E supports a maximum clock frequency of 800 MHz.
Q: Can I use this memory module in a laptop or desktop computer? A: Yes, the MT41K512M8RH-125 M:E can be used in both laptops and desktop computers.
Q: Is this memory module compatible with DDR3 or DDR4 systems? A: The MT41K512M8RH-125 M:E is compatible with DDR3 systems.
Q: What is the CAS latency of this memory module? A: The CAS latency of the MT41K512M8RH-125 M:E is CL11.
Q: Can I use multiple MT41K512M8RH-125 M:E modules together in a system? A: Yes, you can use multiple MT41K512M8RH-125 M:E modules together in a system to increase the total memory capacity.
Q: Does this memory module support ECC (Error Correction Code)? A: No, the MT41K512M8RH-125 M:E does not support ECC.
Q: What is the form factor of this memory module? A: The MT41K512M8RH-125 M:E has a 78-ball FBGA (Fine-pitch Ball Grid Array) form factor.
Q: Can I use this memory module in industrial or automotive applications? A: Yes, the MT41K512M8RH-125 M:E is suitable for use in industrial and automotive applications due to its extended temperature range and reliability features.
Please note that these answers are based on general information about the MT41K512M8RH-125 M:E memory module. It's always recommended to refer to the official documentation and specifications for accurate and detailed information.