MT29F64G08AECABJ1-10Z:A

Product Overview

Category

MT29F64G08AECABJ1-10Z:A belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08AECABJ1-10Z:A offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F64G08AECABJ1-10Z:A comes in a compact form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F64G08AECABJ1-10Z:A is typically packaged in a small outline integrated circuit (SOIC) package. It is available in different quantities depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 64 GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration of MT29F64G08AECABJ1-10Z:A is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply | | 2 | GND | Ground | | 3 | A0-A18 | Address Inputs | | 4 | CE# | Chip Enable | | 5 | CLE | Command Latch Enable | | 6 | ALE | Address Latch Enable | | 7 | RE# | Read Enable | | 8 | WE# | Write Enable | | 9-16 | DQ0-DQ7 | Data Input/Output |

Functional Features

• Page Program: MT29F64G08AECABJ1-10Z:A supports page programming, allowing data to be written in small increments.
• Block Erase: It enables the erasure of entire blocks of data, providing flexibility in managing storage space.
• Random Access: The product allows for random access to specific memory locations, facilitating efficient data retrieval.
• Error Correction: Advanced error correction techniques ensure data integrity and reliability.
• Wear Leveling: MT29F64G08AECABJ1-10Z:A incorporates wear-leveling algorithms to distribute write operations evenly across memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per gigabyte compared to traditional hard disk drives

Working Principles

MT29F64G08AECABJ1-10Z:A utilizes NAND flash memory technology. It consists of a grid of memory cells that store data by trapping electric charges within floating gate transistors. These charges represent binary information (0s and 1s). When reading data, the charges are detected and converted back into digital signals. During programming, charges are injected or removed from the floating gate to modify the stored data.

Application Field Plans

MT29F64G08AECABJ1-10Z:A finds extensive application in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Several alternative models with similar specifications and features are available in the market. Some notable alternatives to MT29F64G08AECABJ1-10Z:A include: - Samsung K9K8G08U0B - Micron MT29F64G08CBABA - Toshiba TH58NVG6D2FTA20

These alternative models can be considered based on specific requirements and compatibility with the target application.

In conclusion, MT29F64G08AECABJ1-10Z:A is a high-capacity NAND flash memory device that offers fast data transfer, reliable performance, and low power consumption. It finds wide application in