MT29F1G08ABAEAWP-ITX:E TR

Product Overview

Category

MT29F1G08ABAEAWP-ITX:E TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABAEAWP-ITX:E TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
• Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
• Low power consumption: The MT29F1G08ABAEAWP-ITX:E TR is energy-efficient, consuming minimal power during operation, which is crucial for battery-powered devices.
• Compact package: This NAND flash memory comes in a small form factor, making it suitable for space-constrained applications.

Packaging/Quantity

The MT29F1G08ABAEAWP-ITX:E TR is typically packaged in surface-mount technology (SMT) packages, such as ball grid array (BGA) or thin small outline package (TSOP). The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA or TSOP
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles
• Data Retention: Up to 10 years

Detailed Pin Configuration

The MT29F1G08ABAEAWP-ITX:E TR has a specific pin configuration that facilitates its integration into electronic devices. The detailed pin configuration is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE# - Chip enable
4. RE# - Read enable
5. WE# - Write enable
6. A0-A18 - Address inputs
7. DQ0-DQ7 - Data input/output
8. R/B# - Ready/busy status
9. CLE - Command latch enable
10. ALE - Address latch enable
11. WP# - Write protect
12. RST# - Reset

Note: This is a simplified representation of the pin configuration. The actual product may have additional pins or variations in pin names.

Functional Features

• Page Program: The MT29F1G08ABAEAWP-ITX:E TR supports page programming, allowing data to be written in small increments, enhancing flexibility and efficiency.
• Block Erase: It provides block erase functionality, enabling the simultaneous erasure of multiple memory blocks, saving time and effort.
• Error Correction Code (ECC): This NAND flash memory incorporates ECC algorithms to detect and correct errors, ensuring data integrity and reliability.
• Wear Leveling: The product employs wear-leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the device.
• Bad Block Management: It includes mechanisms to identify and manage bad blocks, preventing their use and maintaining overall system stability.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate ensures efficient data processing.
• Reliable performance ensures data integrity and durability.
• Low power consumption is ideal for battery-powered devices.
• Compact package facilitates integration into space-constrained applications.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per gigabit compared to alternative storage solutions.
• Susceptible to physical damage, such as electrostatic discharge (ESD), requiring proper handling precautions.

Working Principles

The MT29F1G08ABAEAWP-ITX:E TR utilizes NAND flash memory technology. It consists of a grid-like structure of memory cells that store data in binary form using electrically isolated floating-gate transistors. The presence or absence of an electrical charge on the floating gate determines the stored data value (0 or 1).

During write operations, electrons are injected into the floating gate to store data, while erase operations remove the charge from the floating gate. Reading involves sensing the voltage level on the memory cell to determine the stored data.

The device's controller manages various operations, including programming, erasing, and error correction, ensuring reliable and efficient data storage and retrieval.

Detailed Application Field Plans

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