MT29F1G08ABADAH4-ITX:D TR

Product Overview

Category

MT29F1G08ABADAH4-ITX:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABADAH4-ITX:D TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
• Low power consumption: The MT29F1G08ABADAH4-ITX:D TR is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a small form factor, making it suitable for space-constrained applications.

Packaging/Quantity

The MT29F1G08ABADAH4-ITX:D TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48 pins

Detailed Pin Configuration

The pin configuration of the MT29F1G08ABADAH4-ITX:D TR is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. CE#
19. CLE#
20. WE#
21. RE#
22. WP#
23. R/B#
24. DQ0
25. DQ1
26. DQ2
27. DQ3
28. DQ4
29. DQ5
30. DQ6
31. DQ7
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. GND

Functional Features

• Page Read/Program/Erase: The MT29F1G08ABADAH4-ITX:D TR supports efficient page read, program, and erase operations, allowing for flexible data management.
• Block Management: It incorporates advanced block management algorithms to optimize performance and extend the lifespan of the memory.
• Error Correction Code (ECC): This NAND flash memory utilizes ECC techniques to ensure data integrity and reliability.
• Wear-Leveling: The product employs wear-leveling algorithms to distribute write operations evenly across memory blocks, preventing premature wear-out.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate for quick read and write operations.
• Reliable performance over an extended period.
• Low power consumption for energy efficiency.
• Compact package suitable for space-constrained applications.

Disadvantages

• Limited compatibility with certain legacy systems that do not support NAND flash memory.

Working Principles

The MT29F1G08ABADAH4-ITX:D TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data by trapping electrons in a floating gate. The presence or absence of trapped electrons determines the stored data value (0 or 1). Data can be read, programmed, or erased at the page level using specific voltage levels and control signals.

Detailed Application Field Plans

The MT29F1G08ABADAH4-ITX:D TR finds application in various electronic devices, including: - Smartphones and tablets for data storage and app execution. - Digital cameras for storing photos and videos. - Solid-state drives (SSDs) for high-speed data storage in computers and servers. - Industrial control systems for reliable and durable data storage.

Detailed and Complete Alternative Models

Some alternative models to the MT29F1G08ABADAH4-ITX:D TR include: - MT29F1G