MT29F1G08ABADAH4-ITE:D TR

Product Overview

Category

MT29F1G08ABADAH4-ITE:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G08ABADAH4-ITE:D TR offers a storage capacity of 1 gigabit (1 Gb), allowing for ample data storage.
• Fast data transfer rates: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product ensures reliable performance with built-in error correction codes (ECC) that enhance data integrity.
• Low power consumption: The MT29F1G08ABADAH4-ITE:D TR is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor package, allowing for easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABADAH4-ITE:D TR is typically packaged in surface mount technology (SMT) packages. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 1 Gb
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Data Transfer Rate: Up to 200 Mbps

Detailed Pin Configuration

The MT29F1G08ABADAH4-ITE:D TR has a standard pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. R/B: Ready/busy status
9. DQ0-DQ7: Data input/output lines

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data at the block level, providing flexibility in managing stored information.
• Random Access: Allows direct access to any memory location, facilitating efficient data retrieval.
• Wear Leveling: Implements wear-leveling algorithms to evenly distribute write and erase operations, extending the product's lifespan.
• Bad Block Management: Incorporates mechanisms to handle and isolate defective blocks, ensuring reliable operation.

Advantages and Disadvantages

Advantages

• High storage capacity for extensive data storage needs.
• Fast data transfer rates for quick access to stored information.
• Reliable performance with built-in error correction codes.
• Low power consumption, suitable for battery-powered devices.
• Compact package for easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F1G08ABADAH4-ITE:D TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the charge level in each memory cell is detected, allowing the retrieval of stored information.

Detailed Application Field Plans

The MT29F1G08ABADAH4-ITE:D TR finds applications in various electronic devices, including: - Smartphones and tablets for storing operating systems, applications, and user data. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable data storage in computers and servers.

Detailed and Complete Alternative Models

1. MT29F1G08ABADAH4-ITE:D TR - 1 Gb NAND Flash Memory
2. MT29F2G08ABAEAWP-ITE:A TR - 2 Gb NAND Flash Memory
3. MT29F4G08ABADAH4-ITE:C TR - 4 Gb NAND Flash Memory
4. MT29F8G08ABADAH4-ITE:B TR - 8 Gb NAND Flash Memory

These alternative models offer higher storage capacities while maintaining similar characteristics and functionality to the MT29F1G08ABADAH4-ITE:D TR.

Note: The above information is subject to change based on product revisions and advancements in technology.

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