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MT29F1G08ABADAH4-IT:D TR

MT29F1G08ABADAH4-IT:D TR

Product Overview

Category

MT29F1G08ABADAH4-IT:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F1G08ABADAH4-IT:D TR offers a storage capacity of 1 gigabit.
  • Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
  • Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
  • Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
  • Compact package: It comes in a small form factor package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F1G08ABADAH4-IT:D TR is typically packaged in surface mount technology (SMT) packages. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

  • Storage Capacity: 1 gigabit
  • Interface: NAND
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: SMT package

Detailed Pin Configuration

The MT29F1G08ABADAH4-IT:D TR has a standard pin configuration as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. A0-A18: Address inputs
  4. CLE: Command latch enable
  5. ALE: Address latch enable
  6. CE#: Chip enable
  7. RE#: Read enable
  8. WE#: Write enable
  9. R/B#: Ready/Busy status
  10. DQ0-DQ7: Data input/output

Functional Features

  • Page Program: Allows data to be written into the memory cells in page-level increments.
  • Block Erase: Enables erasing of multiple memory cells simultaneously, improving efficiency.
  • Read Operation: Facilitates fast and reliable retrieval of stored data.
  • Error Correction: Implements advanced error correction techniques to ensure data integrity.
  • Wear Leveling: Distributes write operations evenly across memory blocks, extending the product's lifespan.

Advantages and Disadvantages

Advantages

  • High storage capacity for data-intensive applications.
  • Fast data transfer rate enhances overall system performance.
  • Reliable performance with advanced error correction techniques.
  • Low power consumption extends battery life in portable devices.
  • Compact package allows for easy integration into various electronic devices.

Disadvantages

  • Limited endurance: NAND flash memory has a finite number of program/erase cycles.
  • Relatively higher cost compared to other types of non-volatile memory.
  • Susceptible to data loss in case of power failure during write operations.

Working Principles

The MT29F1G08ABADAH4-IT:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. The data is accessed by applying appropriate voltages to the address inputs and control signals.

During a write operation, data is programmed into the memory cells in page-level increments. Erasing of data is performed at the block level. The read operation retrieves the stored data by sensing the electrical charge on the floating gates.

Detailed Application Field Plans

The MT29F1G08ABADAH4-IT:D TR finds extensive application in various electronic devices that require non-volatile data storage. Some of the common application fields include:

  1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
  2. Digital cameras: Provides high-speed storage for capturing and storing images and videos.
  3. Solid-state drives (SSDs): Used as primary storage in computers and laptops, offering fast boot times and improved system performance.
  4. Automotive electronics: Enables data storage for infotainment systems, navigation, and driver assistance features.
  5. Industrial control systems: Utilized for storing firmware, configuration data, and logging information.

Detailed and Complete Alternative Models

  1. MT29F1G08ABADAH4-IT:E TR
  2. MT29F1G08ABADAH4-IT:F TR
  3. MT29F1G08ABADAH4-IT:G TR
  4. MT29F1G08ABADAH4-IT:H TR

These alternative models offer similar specifications and functionality to the MT29F1G08ABADAH4-IT:D TR, providing customers with options based on their specific requirements.

In conclusion, the MT29

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT29F1G08ABADAH4-IT:D TR dalam solusi teknis

1. What is the MT29F1G08ABADAH4-IT:D TR?

The MT29F1G08ABADAH4-IT:D TR is a specific model of NAND flash memory chip manufactured by Micron Technology. It is commonly used in various technical solutions for data storage and retrieval.

2. What is the capacity of the MT29F1G08ABADAH4-IT:D TR?

The MT29F1G08ABADAH4-IT:D TR has a capacity of 1 gigabit (Gb), which is equivalent to 128 megabytes (MB) or approximately 0.125 gigabytes (GB).

3. What is the interface of the MT29F1G08ABADAH4-IT:D TR?

The MT29F1G08ABADAH4-IT:D TR uses a standard 8-bit parallel interface for communication with the host device.

4. What is the operating voltage range of the MT29F1G08ABADAH4-IT:D TR?

The MT29F1G08ABADAH4-IT:D TR operates within a voltage range of 2.7V to 3.6V.

5. What is the maximum clock frequency supported by the MT29F1G08ABADAH4-IT:D TR?

The MT29F1G08ABADAH4-IT:D TR supports a maximum clock frequency of 50 MHz.

6. What is the page size of the MT29F1G08ABADAH4-IT:D TR?

The MT29F1G08ABADAH4-IT:D TR has a page size of 2,112 bytes, which includes both data and spare area.

7. Does the MT29F1G08ABADAH4-IT:D TR support hardware data protection features?

Yes, the MT29F1G08ABADAH4-IT:D TR supports various hardware data protection features such as program/erase lockout, block lock, and password protection.

8. What is the typical endurance of the MT29F1G08ABADAH4-IT:D TR?

The MT29F1G08ABADAH4-IT:D TR has a typical endurance of 100,000 program/erase cycles per block.

9. What is the typical data retention period of the MT29F1G08ABADAH4-IT:D TR?

The MT29F1G08ABADAH4-IT:D TR has a typical data retention period of 10 years.

10. Is the MT29F1G08ABADAH4-IT:D TR RoHS compliant?

Yes, the MT29F1G08ABADAH4-IT:D TR is RoHS (Restriction of Hazardous Substances) compliant, meaning it meets the environmental standards set by the European Union.