MT29F16G08ABACAWP-ITZ:C TR

Product Overview

Category

MT29F16G08ABACAWP-ITZ:C TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F16G08ABACAWP-ITZ:C TR offers a storage capacity of 16 gigabytes (GB), allowing for ample space to store large amounts of data.
• Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: The product is designed to deliver reliable performance with low power consumption, making it suitable for battery-powered devices.
• Durable design: The MT29F16G08ABACAWP-ITZ:C TR is built to withstand harsh environmental conditions, ensuring data integrity even in challenging operating environments.

Package and Quantity

The MT29F16G08ABACAWP-ITZ:C TR is available in a small form factor package, commonly known as a Thin Small Outline Package (TSOP). It is supplied in reels, with each reel containing a specific quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 16 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP

Pin Configuration

The pin configuration of the MT29F16G08ABACAWP-ITZ:C TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. CE# or CE1#: Chip enable
7. RE# or RE1#: Read enable
8. WE# or WE1#: Write enable
9. R/B# or R/B1#: Ready/Busy status output
10. DQ0-DQ15: Data input/output

Functional Features

• Page Program Operation: The MT29F16G08ABACAWP-ITZ:C TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: This flash memory device enables block erase operations, which erase a large portion of data simultaneously, enhancing efficiency.
• Read and Write Protection: It offers read and write protection features to prevent unauthorized access or modification of stored data.
• Error Correction Code (ECC): The product incorporates ECC algorithms to detect and correct errors that may occur during data transfer, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick access to stored information.
• Reliable performance with low power consumption.
• Durable design ensures data integrity in challenging environments.

Disadvantages

• Limited lifespan: NAND flash memory has a finite number of program/erase cycles, which may affect its longevity.
• Higher cost compared to other types of memory.

Working Principles

The MT29F16G08ABACAWP-ITZ:C TR utilizes NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. When a voltage is applied, the trapped charges can be read as binary data. To write new data, the existing charges are erased, and new charges are programmed into the cells.

Application Field Plans

The MT29F16G08ABACAWP-ITZ:C TR is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

Some alternative models to the MT29F16G08ABACAWP-ITZ:C TR include: - Samsung K9K8G08U0B - Toshiba TH58NVG7D2FLA89 - Micron MT29F16G08CBACA

These models offer similar specifications and functionalities, providing options for different application requirements.

In conclusion, the MT29F16G08ABACAWP-ITZ:C TR is a high-capacity NAND flash memory device that offers fast data transfer, reliable performance, and durability. It finds applications in various electronic devices and has alternative models available in the market.