MT29F128G08CBECBH6-12M:C

Product Overview

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

High storage capacity: The MT29F128G08CBECBH6-12M:C offers a storage capacity of 128 gigabytes (GB), allowing for ample space to store large amounts of data.
Fast data transfer rate: With a high-speed interface, this NAND flash memory enables quick read and write operations, ensuring efficient data processing.
Reliable performance: The product is designed to provide reliable and consistent performance, ensuring data integrity and durability.
Low power consumption: The MT29F128G08CBECBH6-12M:C is energy-efficient, consuming minimal power during operation, which is beneficial for battery-powered devices.
Compact package: This NAND flash memory is available in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F128G08CBECBH6-12M:C is typically packaged in a surface-mount technology (SMT) package. The exact packaging and quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

Part Number: MT29F128G08CBECBH6-12M:C
Memory Type: NAND Flash
Storage Capacity: 128 GB
Interface: Serial Peripheral Interface (SPI)
Operating Voltage: 2.7V - 3.6V
Operating Temperature Range: -40°C to +85°C
Package Type: SMT
Package Dimensions: [Insert dimensions]

Detailed Pin Configuration

VCC: Power supply voltage
GND: Ground reference
CE: Chip enable
RE: Read enable
WE: Write enable
A0-A18: Address inputs
DQ0-DQ7: Data input/output
R/B: Ready/busy status
WP: Write protect
CLE: Command latch enable
ALE: Address latch enable
CEB: Chip enable bar
RB/BY: Ready/busy or byte/word organization selection
NC: No connection

Functional Features

High-speed data transfer: The MT29F128G08CBECBH6-12M:C offers fast read and write speeds, allowing for efficient data processing.
Error correction: This NAND flash memory incorporates error correction techniques to ensure data integrity and reliability.
Wear leveling: The product employs wear leveling algorithms to distribute data evenly across memory cells, extending the lifespan of the device.
Bad block management: The MT29F128G08CBECBH6-12M:C includes a mechanism for identifying and managing bad blocks, enhancing overall performance and longevity.

Advantages and Disadvantages

Advantages

Large storage capacity
Fast data transfer rate
Reliable performance
Low power consumption
Compact package size

Disadvantages

Higher cost compared to other types of memory
Limited endurance (number of program/erase cycles)

Working Principles

The MT29F128G08CBECBH6-12M:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the charge level is measured to determine the stored value. Writing data involves applying a specific voltage to program the desired charge level.

Detailed Application Field Plans

The MT29F128G08CBECBH6-12M:C is widely used in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

MT29F128G08CBECBH6-12M:A
MT29F128G08CBECBH6-12M:B
MT29F128G08CBECBH6-12M:D
MT29F128G08CBECBH6-12M:E

These alternative models offer similar specifications and functionality to the MT29F128G08CBECBH6-12M:C, providing options for different customer requirements and compatibility.

In conclusion, the MT29F128G08CBECBH6-12M:C is a high-capacity NAND flash memory with fast data transfer rates, reliable performance, and low power consumption. It finds applications in

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT29F128G08CBECBH6-12M:C dalam solusi teknis

Question: What is the capacity of the MT29F128G08CBECBH6-12M:C?
Answer: The MT29F128G08CBECBH6-12M:C has a capacity of 128 gigabits (16 gigabytes).
Question: What is the operating voltage range for this memory chip?
Answer: The operating voltage range for the MT29F128G08CBECBH6-12M:C is typically between 2.7V and 3.6V.
Question: What is the maximum clock frequency supported by this memory chip?
Answer: The MT29F128G08CBECBH6-12M:C supports a maximum clock frequency of 100 MHz.
Question: Does this memory chip support random access or sequential access?
Answer: The MT29F128G08CBECBH6-12M:C supports random access, allowing for efficient read and write operations.
Question: What is the typical endurance rating for this memory chip?
Answer: The MT29F128G08CBECBH6-12M:C has a typical endurance rating of 10,000 program/erase cycles.
Question: Is this memory chip compatible with standard NAND flash interfaces?
Answer: Yes, the MT29F128G08CBECBH6-12M:C is designed to be compatible with standard NAND flash interfaces, making it easy to integrate into existing systems.
Question: What is the page size of this memory chip?
Answer: The MT29F128G08CBECBH6-12M:C has a page size of 8 kilobytes.
Question: Does this memory chip support hardware data protection features?
Answer: Yes, the MT29F128G08CBECBH6-12M:C supports hardware data protection features such as ECC (Error Correction Code) and bad block management.
Question: What is the typical data retention period for this memory chip?
Answer: The MT29F128G08CBECBH6-12M:C has a typical data retention period of 10 years.
Question: Is this memory chip suitable for automotive or industrial applications?
Answer: Yes, the MT29F128G08CBECBH6-12M:C is designed to meet the requirements of automotive and industrial applications, including extended temperature ranges and high reliability.