MT28F800B5SG-8 T TR

Product Overview

Category

MT28F800B5SG-8 T TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: The stored data is retained even when power is turned off.
• High-speed read and write operations: Enables quick access to data.
• Compact size: Allows for integration into small electronic devices.
• Durable: Can withstand harsh environmental conditions.
• Low power consumption: Helps conserve battery life in portable devices.

Package

MT28F800B5SG-8 T TR is available in a surface-mount package, which facilitates easy installation on printed circuit boards (PCBs).

Essence

The essence of this product lies in its ability to provide reliable and high-capacity storage for electronic devices, ensuring efficient data management and retrieval.

Packaging/Quantity

MT28F800B5SG-8 T TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 8 gigabits (1 gigabyte)
• Organization: 1G x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns (max)
• Erase/Program Cycles: 100,000 cycles (typical)

Detailed Pin Configuration

The pin configuration of MT28F800B5SG-8 T TR is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ7: Data input/output lines
4. WE#: Write enable control signal
5. CE#: Chip enable control signal
6. OE#: Output enable control signal
7. RP#/BYTE# (optional): Reset/byte enable control signal
8. RE#: Read enable control signal
9. WP#/ACC: Write protect/control signal
10. VSS: Ground

Functional Features

• Block Erase: Allows for erasing large blocks of data simultaneously, enhancing efficiency.
• Page Program: Enables programming of individual memory pages, facilitating flexible data storage.
• Read and Write Protection: Provides security features to prevent unauthorized access or modification of stored data.
• Error Correction Code (ECC): Incorporates ECC algorithms to detect and correct errors during read operations, ensuring data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Compact size
• Low power consumption
• Durable and reliable

Disadvantages

• Limited erase/write cycles
• Relatively higher cost compared to other memory technologies

Working Principles

MT28F800B5SG-8 T TR utilizes a floating gate transistor technology called NAND flash memory. It stores data by trapping electric charges in the floating gate, which alters the threshold voltage of the transistor. This change in threshold voltage is used to represent binary data (0s and 1s). During read operations, the stored charges are measured to retrieve the stored data.

Detailed Application Field Plans

MT28F800B5SG-8 T TR finds extensive application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT28F800B5SG-8 T TR include: - Samsung K9F1G08U0D - Micron MT29F1G08ABADAWP - Toshiba TC58NVG1S3HTA00

These alternative models offer similar specifications and functionality, providing options for manufacturers and designers in choosing the most suitable flash memory for their specific applications.

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