Micron Technology Inc.
Gambar mungkin merupakan representasi.
Lihat spesifikasi untuk detail produk.
MT28F400B5WG-8 TET
Lihat Detail Lembar Data

MT28F400B5WG-8 TET

Product Overview

Category

MT28F400B5WG-8 TET belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

  • Non-volatile memory: The stored data is retained even when power is turned off.
  • High-speed read and write operations: Enables quick access to data.
  • Large storage capacity: Offers ample space for storing files, documents, and multimedia content.
  • Compact size: Allows for integration into small-sized electronic devices.
  • Durable and reliable: Resistant to physical shocks and vibrations.

Package

MT28F400B5WG-8 TET is available in a compact package that ensures easy installation and integration into electronic devices.

Essence

The essence of MT28F400B5WG-8 TET lies in its ability to provide reliable and high-performance data storage solutions for a wide range of electronic devices.

Packaging/Quantity

This product is typically packaged individually and is available in varying quantities depending on the requirements of the customer or manufacturer.

Specifications

  • Memory Type: Flash
  • Capacity: 4GB
  • Interface: Parallel
  • Voltage Supply: 2.7V - 3.6V
  • Access Time: 80ns
  • Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

  1. VCC: Power supply voltage
  2. GND: Ground
  3. A0-A18: Address inputs
  4. DQ0-DQ15: Data input/output
  5. WE#: Write enable
  6. CE#: Chip enable
  7. OE#: Output enable
  8. RP#: Ready/Busy status
  9. RY/BY#: Read/Busy status
  10. WP#: Write protect

Functional Features

  • High-speed data transfer: Enables quick read and write operations.
  • Error correction: Incorporates error correction techniques to ensure data integrity.
  • Wear-leveling algorithm: Distributes data evenly across memory cells, extending the lifespan of the flash memory.
  • Block erase capability: Allows for efficient erasure of large blocks of data.

Advantages and Disadvantages

Advantages

  • Fast access times
  • Large storage capacity
  • Compact size
  • Durable and reliable
  • Low power consumption

Disadvantages

  • Limited endurance: Flash memory has a finite number of write/erase cycles.
  • Relatively higher cost compared to other types of memory.

Working Principles

MT28F400B5WG-8 TET utilizes the principles of NAND flash memory technology. It stores data by trapping electric charges in floating gate transistors. When reading data, the stored charges are measured to determine the binary values. During writing, the charges are either added or removed from the floating gate to represent the desired data.

Detailed Application Field Plans

MT28F400B5WG-8 TET finds applications in various electronic devices, including: 1. Smartphones and tablets 2. Digital cameras 3. Portable media players 4. Solid-state drives (SSDs) 5. Embedded systems

Detailed and Complete Alternative Models

  1. MT29F4G08ABAEAWP-IT: 4GB NAND Flash Memory, Parallel Interface, 80ns Access Time.
  2. S34ML04G200TFI000: 4GB NAND Flash Memory, Parallel Interface, 80ns Access Time.
  3. IS42S32400F-7TLI: 4GB SDRAM, Parallel Interface, 80ns Access Time.

These alternative models offer similar specifications and functionality to MT28F400B5WG-8 TET, providing options for different design requirements.

Word count: 525 words

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT28F400B5WG-8 TET dalam solusi teknis

Sure! Here are 10 common questions and answers related to the application of MT28F400B5WG-8 TET in technical solutions:

  1. Q: What is MT28F400B5WG-8 TET? A: MT28F400B5WG-8 TET is a specific type of flash memory chip manufactured by Micron Technology.

  2. Q: What is the capacity of MT28F400B5WG-8 TET? A: MT28F400B5WG-8 TET has a capacity of 4 megabits (512 kilobytes).

  3. Q: What is the operating voltage range for MT28F400B5WG-8 TET? A: The operating voltage range for MT28F400B5WG-8 TET is typically between 2.7V and 3.6V.

  4. Q: What is the access time of MT28F400B5WG-8 TET? A: The access time of MT28F400B5WG-8 TET is 80 nanoseconds (ns).

  5. Q: What is the interface used for connecting MT28F400B5WG-8 TET to a microcontroller or processor? A: MT28F400B5WG-8 TET uses a parallel interface, typically with an 8-bit data bus.

  6. Q: Can MT28F400B5WG-8 TET be used for code storage in embedded systems? A: Yes, MT28F400B5WG-8 TET can be used for storing program code in various embedded systems.

  7. Q: Is MT28F400B5WG-8 TET suitable for high-speed data logging applications? A: No, MT28F400B5WG-8 TET is not specifically designed for high-speed data logging due to its relatively slower access time.

  8. Q: Can MT28F400B5WG-8 TET be used in automotive applications? A: Yes, MT28F400B5WG-8 TET is suitable for use in automotive applications that require non-volatile memory storage.

  9. Q: Does MT28F400B5WG-8 TET support hardware or software write protection? A: Yes, MT28F400B5WG-8 TET supports both hardware and software write protection features.

  10. Q: What is the typical lifespan of MT28F400B5WG-8 TET? A: MT28F400B5WG-8 TET has a typical lifespan of 100,000 program/erase cycles before it may start to degrade.

Please note that these answers are general and may vary depending on specific application requirements and datasheet specifications.