Micron Technology Inc.
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MT28F320J3BS-11 GMET TR
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MT28F320J3BS-11 GMET TR

Product Overview

Category: Memory Device
Use: Data storage and retrieval
Characteristics: High capacity, fast access speed
Package: Surface mount package
Essence: Non-volatile memory device
Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Model: MT28F320J3BS-11 GMET TR
  • Capacity: 32 Megabits (4 Megabytes)
  • Access Time: 110 ns
  • Interface: Parallel
  • Operating Voltage: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Retention: 20 years

Detailed Pin Configuration

The MT28F320J3BS-11 GMET TR has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. WE#
  35. CE#
  36. OE#
  37. BYTE#
  38. DQ0
  39. DQ1
  40. DQ2
  41. DQ3
  42. DQ4
  43. DQ5
  44. DQ6
  45. DQ7
  46. VSS
  47. NC
  48. VCC

Functional Features

  • Non-volatile memory: Retains data even when power is removed
  • High capacity: 32 Megabits (4 Megabytes) of storage space
  • Fast access speed: 110 ns access time for quick data retrieval
  • Parallel interface: Allows for efficient data transfer

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access speed - Non-volatile memory - Suitable for various applications

Disadvantages: - Requires external circuitry for interfacing - Limited to parallel interface

Working Principles

The MT28F320J3BS-11 GMET TR is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. This allows the device to retain the stored information even when power is removed. During read operations, the stored charges are sensed to determine the stored data.

Detailed Application Field Plans

The MT28F320J3BS-11 GMET TR can be used in various applications that require non-volatile data storage and fast access times. Some potential application fields include:

  1. Embedded systems
  2. Consumer electronics
  3. Automotive electronics
  4. Industrial control systems
  5. Medical devices

Detailed and Complete Alternative Models

  1. MT28F320J3RG-11 GMET TR
  2. MT28F320J3BS-12 GMET TR
  3. MT28F320J3RG-12 GMET TR
  4. MT28F320J3BS-10 GMET TR
  5. MT28F320J3RG-10 GMET TR

These alternative models offer similar specifications and functionality to the MT28F320J3BS-11 GMET TR, providing options for different requirements and preferences.

(Note: The content provided above is a sample and may not reflect actual product details.)

Sebutkan 10 pertanyaan dan jawaban umum terkait penerapan MT28F320J3BS-11 GMET TR dalam solusi teknis

1. What is the MT28F320J3BS-11 GMET TR?

The MT28F320J3BS-11 GMET TR is a specific model of flash memory chip manufactured by Micron Technology. It has a capacity of 32 megabits and operates at a speed of 11 nanoseconds.

2. What are the typical applications of the MT28F320J3BS-11 GMET TR?

The MT28F320J3BS-11 GMET TR is commonly used in various technical solutions that require non-volatile storage, such as embedded systems, automotive electronics, industrial control systems, and consumer electronics.

3. What is the voltage requirement for the MT28F320J3BS-11 GMET TR?

The MT28F320J3BS-11 GMET TR operates at a voltage range of 2.7V to 3.6V.

4. What is the interface protocol supported by the MT28F320J3BS-11 GMET TR?

The MT28F320J3BS-11 GMET TR supports a parallel interface with a 16-bit data bus.

5. Can the MT28F320J3BS-11 GMET TR be used for code execution?

Yes, the MT28F320J3BS-11 GMET TR can be used for code execution as it supports random access read operations.

6. Does the MT28F320J3BS-11 GMET TR support write operations?

Yes, the MT28F320J3BS-11 GMET TR supports both random access write and block erase operations.

7. What is the endurance rating of the MT28F320J3BS-11 GMET TR?

The MT28F320J3BS-11 GMET TR has an endurance rating of 100,000 program/erase cycles.

8. What is the data retention period of the MT28F320J3BS-11 GMET TR?

The MT28F320J3BS-11 GMET TR has a data retention period of 20 years.

9. Is the MT28F320J3BS-11 GMET TR compatible with other flash memory chips?

Yes, the MT28F320J3BS-11 GMET TR is compatible with other flash memory chips that use a similar parallel interface and voltage range.

10. Can the MT28F320J3BS-11 GMET TR be used in harsh environments?

Yes, the MT28F320J3BS-11 GMET TR is designed to operate in extended temperature ranges and can withstand harsh environmental conditions, making it suitable for use in rugged applications.